Applied Surface Science, volume 589, pages 152971

2D-Mo3S4 phase as promising contact for MoS2

Publication typeJournal Article
Publication date2022-07-01
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor6.7
ISSN01694332
Surfaces, Coatings and Films
General Chemistry
General Physics and Astronomy
Condensed Matter Physics
Surfaces and Interfaces
Abstract
• Novel metallic 2D phase Cm -Mo 3 S 4 perspective for electrode materials. • Transition from H-Mo 3 S 4 (defective H-MoS 2 ) to Cm -Mo 3 S 4 phase. • Lateral heterostructure H-MoS 2 / Cm -Mo 3 S 4 (semiconductor/metallic). • Intermediate Schottky contact. The search for electrode materials for two-dimensional structures, particularly for semiconducting H-MoS 2 , is a significant problem for contemporary materials science. This stimulates interest in metastable structures, which motivates us to look at non-stoichiometric metastable states known as Berthollides. An unbiased evolutionary search for new two-dimensional structures in Mo-S system showed the presence of Mo 5 S 4 , Mo 3 S 4 , and MoS metastable structures (located near the decomposition line) in the low-sulfur area of phase diagram. The predicted novel Cm -Mo 3 S 4 phase exhibits metallic properties and dynamic stability confirmed by the calculation of phonon dispersion spectra. Its lattice parameters are similar to the semiconducting H-MoS 2 phase which makes it possible to use Cm -Mo 3 S 4 as a conducting contact in nanodevices based on MoS 2 . A study of proposed H-MoS 2 / Cm -Mo 3 S 4 lateral heterostructures showed that in the contact region a transition to the conducting states of the H-MoS 2 edge atoms is observed, as well as the preservation of Cm -Mo 3 S 4 conducting properties. The main feature of Cm -Mo 3 S 4 is that it can be structurally obtained by a direct transition of H-MoS 2 monolayer with sulfur vacancies. As a result, the predicted Cm -Mo 3 S 4 phase is a promising candidate for conducting contacts in nanoelectronic device components.

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Sukhanova E. V. et al. 2D-Mo3S4 phase as promising contact for MoS2 // Applied Surface Science. 2022. Vol. 589. p. 152971.
GOST all authors (up to 50) Copy
Sukhanova E. V., Kvashnin A. G., Bereznikova L. A., Zakaryan H. A., Aghamalyan M. A., Kvashnin D., Popov Z. 2D-Mo3S4 phase as promising contact for MoS2 // Applied Surface Science. 2022. Vol. 589. p. 152971.
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TY - JOUR
DO - 10.1016/j.apsusc.2022.152971
UR - https://doi.org/10.1016%2Fj.apsusc.2022.152971
TI - 2D-Mo3S4 phase as promising contact for MoS2
T2 - Applied Surface Science
AU - Sukhanova, E V
AU - Kvashnin, Alexander G.
AU - Bereznikova, L. A.
AU - Zakaryan, Hayk A
AU - Aghamalyan, Misha A
AU - Kvashnin, Dmitry
AU - Popov, Zakhar
PY - 2022
DA - 2022/07/01 00:00:00
PB - Elsevier
SP - 152971
VL - 589
SN - 0169-4332
ER -
BibTex
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BibTex Copy
@article{2022_Sukhanova,
author = {E V Sukhanova and Alexander G. Kvashnin and L. A. Bereznikova and Hayk A Zakaryan and Misha A Aghamalyan and Dmitry Kvashnin and Zakhar Popov},
title = {2D-Mo3S4 phase as promising contact for MoS2},
journal = {Applied Surface Science},
year = {2022},
volume = {589},
publisher = {Elsevier},
month = {jul},
url = {https://doi.org/10.1016%2Fj.apsusc.2022.152971},
pages = {152971},
doi = {10.1016/j.apsusc.2022.152971}
}
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