Materials Chemistry and Physics, volume 207, pages 253-258

Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2

Filianina M. V. 1
Tereshchenko O E
Rybkin A G
Kokh K. A.
Golyashov V A
Petukhov A E
Shvets I. A. 2, 3
SHIKIN A. M.
CHULKOV E. V.
Polley C
BALASUBRAMANIAN T. 4
Leandersson M. 4
Chulkov E.V. 2, 5, 6
Kokh Konstantin A. 2, 7, 8
Tereshchenko O. E. 2, 7
Polley C. 4
Publication typeJournal Article
Publication date2018-03-01
Quartile SCImago
Q1
Quartile WOS
Q2
Impact factor4.6
ISSN02540584
Condensed Matter Physics
General Materials Science
Abstract
Electronic and spin structure of the Dirac-cone-like topological surface and valence band states were studied experimentally and theoretically for topological insulator with fractional stoichiometry Bi1.5Sb0.5Te1.8Se1.2 which is considered as one of the best candidates for efficient spin-polarized current generation. By means of spin- and angle-resolved photoelectron spectroscopy we demonstrate the separation of the Dirac point from the bulk states and the helical spin structure of the Dirac cone. For the freshly cleaved surface the Fermi level is located in the bulk band gap and an exposure in residual gases shifts the Fermi level towards the bulk conduction band. Results of the theoretical calculations are in a good agreement with the experimental data. Surface morphology study shows a well-structured atomically sharp surface after cleavage. The transport measurements confirm that this topological insulator has relatively high resistance with semiconductor-like temperature dependence at low temperatures. The studied Bi1.5Sb0.5Te1.8Se1.2 crystals demonstrated a quite large Seebeck coefficient values reaching −400 μV/K at room temperature.

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Filianina M. V. et al. Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 // Materials Chemistry and Physics. 2018. Vol. 207. pp. 253-258.
GOST all authors (up to 50) Copy
Klimovskikh I. I., SHIKIN A. M., Leandersson M., BALASUBRAMANIAN T., Polley C., Tereshchenko O. E., Kokh K. A., Golyashov V. A., CHULKOV E. V., Petukhov A. E., Rybkin A. G., Shvets I. A., Filianina M. V., Rybkin A. G., Petukhov A. E., Chulkov E., Golyashov V. A., Kokh K. A., Tereshchenko O. E., Polley C., Shikin A. M. Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 // Materials Chemistry and Physics. 2018. Vol. 207. pp. 253-258.
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TY - JOUR
DO - 10.1016/j.matchemphys.2017.12.035
UR - https://doi.org/10.1016%2Fj.matchemphys.2017.12.035
TI - Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2
T2 - Materials Chemistry and Physics
AU - Filianina, M. V.
AU - Klimovskikh, Ilya I.
AU - Shvets, I. A.
AU - Rybkin, A G
AU - Petukhov, A E
AU - CHULKOV, E. V.
AU - Golyashov, V A
AU - Kokh, K. A.
AU - Tereshchenko, O E
AU - Polley, C
AU - BALASUBRAMANIAN, T.
AU - Leandersson, M.
AU - SHIKIN, A. M.
AU - Rybkin, Artem G.
AU - Petukhov, Anatoly E.
AU - Chulkov, E.V.
AU - Golyashov, Vladimir A.
AU - Kokh, Konstantin A.
AU - Tereshchenko, O. E.
AU - Polley, C.
AU - Shikin, Alexander M.
PY - 2018
DA - 2018/03/01 00:00:00
PB - Elsevier
SP - 253-258
VL - 207
SN - 0254-0584
ER -
BibTex
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@article{2018_Filianina,
author = {M. V. Filianina and Ilya I. Klimovskikh and I. A. Shvets and A G Rybkin and A E Petukhov and E. V. CHULKOV and V A Golyashov and K. A. Kokh and O E Tereshchenko and C Polley and T. BALASUBRAMANIAN and M. Leandersson and A. M. SHIKIN and Artem G. Rybkin and Anatoly E. Petukhov and E.V. Chulkov and Vladimir A. Golyashov and Konstantin A. Kokh and O. E. Tereshchenko and C. Polley and Alexander M. Shikin},
title = {Spin and electronic structure of the topological insulator Bi1.5Sb0.5Te1.8Se1.2},
journal = {Materials Chemistry and Physics},
year = {2018},
volume = {207},
publisher = {Elsevier},
month = {mar},
url = {https://doi.org/10.1016%2Fj.matchemphys.2017.12.035},
pages = {253--258},
doi = {10.1016/j.matchemphys.2017.12.035}
}
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