Effect of helium ion beam treatment on wet etching of silicon dioxide

Тип публикацииJournal Article
Дата публикации2018-03-01
scimago Q3
wos Q3
БС2
SJR0.351
CiteScore2.3
Impact factor1.3
ISSN0168583X, 18729584
Instrumentation
Nuclear and High Energy Physics
Краткое описание
We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm−2 to 1017 cm−2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.
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Petrov Y. V. et al. Effect of helium ion beam treatment on wet etching of silicon dioxide // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018. Vol. 418. pp. 94-100.
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Petrov Y. V., Grigoryev E. A., Sharov T. V., Baraban A. Effect of helium ion beam treatment on wet etching of silicon dioxide // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018. Vol. 418. pp. 94-100.
RIS |
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TY - JOUR
DO - 10.1016/j.nimb.2018.01.011
UR - https://doi.org/10.1016/j.nimb.2018.01.011
TI - Effect of helium ion beam treatment on wet etching of silicon dioxide
T2 - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
AU - Petrov, Yu. V.
AU - Grigoryev, E A
AU - Sharov, T V
AU - Baraban, A.P.
PY - 2018
DA - 2018/03/01
PB - Elsevier
SP - 94-100
VL - 418
SN - 0168-583X
SN - 1872-9584
ER -
BibTex
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@article{2018_Petrov,
author = {Yu. V. Petrov and E A Grigoryev and T V Sharov and A.P. Baraban},
title = {Effect of helium ion beam treatment on wet etching of silicon dioxide},
journal = {Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms},
year = {2018},
volume = {418},
publisher = {Elsevier},
month = {mar},
url = {https://doi.org/10.1016/j.nimb.2018.01.011},
pages = {94--100},
doi = {10.1016/j.nimb.2018.01.011}
}