Physical Review B, volume 96, issue 23, publication number 235124

Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4-xSex topological insulator

Shvets I. A. ^{1, 2}

Klimovskikh Ilya I. ¹

Klimovskikh I I ¹

Aliev Ziya S. ^{3, 4}

Aliev Z S ^{3, 4}

Babanly M. ⁵

Babanly M. B. ⁵

Sánchez-Barriga J. ⁶

Sánchez Barriga J ⁶

Krivenkov M ⁶

Krivenkov M. ⁶

Shikin Alexander M. ¹

SHIKIN A. M. ¹

Chulkov E.V. ^{1, 2, 7, 8}

CHULKOV E. V. ^{1, 2, 7, 8}

Hide authors affiliations Show authors affiliations: 8 affiliations

St. Petersburg State University, Saint Petersburg 198504, Russia |

Tomsk State University, Tomsk 634050, Russia |

Institute of Physics, ANAS, AZ1143 Baku, Azerbaijan |

⁴

Azerbaijan State Oil and Industry University, AZ1010 Baku, Azerbaijan |

⁵

Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143 Baku, Azerbaijan |

⁶

Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin, Germany |

⁷

Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain |

⁸

Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain |

Publication type: Journal Article

Publication date: 2017-12-14

American Physical Society (APS)

Journal: Physical Review B

Quartile SCImago

Quartile WOS

Impact factor: 3.7

ISSN: 24699950, 24699969, 10980121, 1550235X

DOI: 10.1103/PhysRevB.96.235124

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Abstract

Detailed comparative theoretical and experimental study of electronic properties and spin structure was carried out for a series of Pb-based quaternary compounds ${\mathrm{PbBi}}_{2}{\mathrm{Te}}_{4\ensuremath{-}x}{\mathrm{Se}}_{x}$. For all values of $x$, these compounds are theoretically predicted to be topological insulators, possessing at high Se content a remarkably large band gap and a Dirac point isolated from bulk states. Using spin- and angle-resolved photoemission spectroscopy, it was shown that the ${\mathrm{PbBi}}_{2}{\mathrm{Te}}_{2}{\mathrm{Se}}_{2}$ and ${\mathrm{PbBi}}_{2}{\mathrm{Te}}_{1.4}{\mathrm{Se}}_{2.6}$ compounds are characterized by well-defined spin-polarized topological surface state in the bulk gap. To define the probable distribution of atoms over the atomic sites for these samples, we performed ab initio calculations in ordered and disordered configurations of the unit cell. We found that theoretical calculations better reproduce photoemission data when Te atoms are placed in the outermost layers of the septuple layer block.

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Elsevier	Elsevier, 3, 23.08% Elsevier 3 publications, 23.08%
American Physical Society (APS)	American Physical Society (APS), 2, 15.38% American Physical Society (APS) 2 publications, 15.38%
Springer Nature	Springer Nature, 2, 15.38% Springer Nature 2 publications, 15.38%
Pleiades Publishing	Pleiades Publishing, 2, 15.38% Pleiades Publishing 2 publications, 15.38%
American Institute of Physics (AIP)	American Institute of Physics (AIP), 1, 7.69% American Institute of Physics (AIP) 1 publication, 7.69%
Multidisciplinary Digital Publishing Institute (MDPI)	Multidisciplinary Digital Publishing Institute (MDPI), 1, 7.69% Multidisciplinary Digital Publishing Institute (MDPI) 1 publication, 7.69%
Chinese Physical Society	Chinese Physical Society, 1, 7.69% Chinese Physical Society 1 publication, 7.69%
Wiley	Wiley, 1, 7.69% Wiley 1 publication, 7.69%
	1 2 3

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Shvets I. A. et al. Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4-xSex topological insulator // Physical Review B. 2017. Vol. 96. No. 23. 235124

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Shvets I. A., Klimovskikh I. I., Klimovskikh I. I., Aliev Z. S., Aliev Z. S., Babanly M. B., Babanly M., Sánchez Barriga J., Sánchez-Barriga J., Krivenkov M., Krivenkov M., SHIKIN A. M., Shikin A. M., CHULKOV E. V., Chulkov E. Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4-xSex topological insulator // Physical Review B. 2017. Vol. 96. No. 23. 235124

RIS |

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RIS Copy

TY - JOUR

DO - 10.1103/PhysRevB.96.235124

UR - https://doi.org/10.1103%2FPhysRevB.96.235124

TI - Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4-xSex topological insulator

T2 - Physical Review B

AU - Shvets, I. A.

AU - Klimovskikh, I I

AU - Krivenkov, M

AU - SHIKIN, A. M.

AU - Aliev, Z S

AU - Babanly, M. B.

AU - Sánchez Barriga, J

AU - CHULKOV, E. V.

AU - Klimovskikh, Ilya I.

AU - Aliev, Ziya S.

AU - Babanly, M.

AU - Sánchez-Barriga, J.

AU - Krivenkov, M.

AU - Shikin, Alexander M.

AU - Chulkov, E.V.

PY - 2017

DA - 2017/12/14 00:00:00

PB - American Physical Society (APS)

IS - 23

VL - 96

SN - 2469-9950

SN - 2469-9969

SN - 1098-0121

SN - 1550-235X

ER -

BibTex

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BibTex Copy

@article{2017_Shvets,

author = {I. A. Shvets and I I Klimovskikh and M Krivenkov and A. M. SHIKIN and Z S Aliev and M. B. Babanly and J Sánchez Barriga and E. V. CHULKOV and Ilya I. Klimovskikh and Ziya S. Aliev and M. Babanly and J. Sánchez-Barriga and M. Krivenkov and Alexander M. Shikin and E.V. Chulkov},

title = {Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4-xSex topological insulator},

journal = {Physical Review B},

year = {2017},

volume = {96},

publisher = {American Physical Society (APS)},

month = {dec},

url = {https://doi.org/10.1103%2FPhysRevB.96.235124},

number = {23},

doi = {10.1103/PhysRevB.96.235124}

}

Found error?

Publisher

American Physical Society (APS)

Journal

Physical Review B

Quartile SCImago

Quartile WOS

Impact factor

3.7

ISSN

24699950 (Print)
24699969 (Electronic)
10980121 (Print)
1550235X (Electronic)

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