Nb/AlO/sub x//Al/AlO/sub x//Nb double-barrier junctions with high critical current densities: Influence of barrier asymmetry
Publication type: Journal Article
Publication date: 2003-06-01
scimago Q2
wos Q3
SJR: 0.508
CiteScore: 3.4
Impact factor: 1.8
ISSN: 10518223, 15582515, 23787074
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
In order to be useful for high speed digital circuit applications, double-barrier SINIS or SIS'IS junctions must be nonhysteretic, possess high critical current densities (j/sub c/>1 kA/cm/sup 2/) and high characteristic voltages V/sub c//spl sim/0.3 mV, where V/sub c/=I/sub c/R/sub sub/ and R/sub sub/ is a characteristic (subgap) resistance damping the junction in the operating range of voltages. This requires high transparencies of barriers and small interlayer thicknesses. Data are presented on fabrication and Josephson properties of SIS'IS junctions with j/sub c/ up to 10 kA/cm/sup 2/ at 4.2 K. It is shown that the asymmetry of double-barrier structure starts playing a major role at high j/sub c/ (i.e., at thin, high transparency barriers) as evidenced by the temperature dependences of the critical current, the value of the current deficit in the I-V characteristics, and the appearance of multiple Andreev reflection peaks in differential conductance of the junctions.
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Tolpygo S. K. et al. Nb/AlO/sub x//Al/AlO/sub x//Nb double-barrier junctions with high critical current densities: Influence of barrier asymmetry // IEEE Transactions on Applied Superconductivity. 2003. Vol. 13. No. 2. pp. 138-141.
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Tolpygo S. K., Brinkman A., Golubov A. A., Kupriyanov M. Yu. Nb/AlO/sub x//Al/AlO/sub x//Nb double-barrier junctions with high critical current densities: Influence of barrier asymmetry // IEEE Transactions on Applied Superconductivity. 2003. Vol. 13. No. 2. pp. 138-141.
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TY - JOUR
DO - 10.1109/TASC.2003.813665
UR - https://doi.org/10.1109/TASC.2003.813665
TI - Nb/AlO/sub x//Al/AlO/sub x//Nb double-barrier junctions with high critical current densities: Influence of barrier asymmetry
T2 - IEEE Transactions on Applied Superconductivity
AU - Tolpygo, S. K.
AU - Brinkman, A.
AU - Golubov, A. A.
AU - Kupriyanov, M Yu
PY - 2003
DA - 2003/06/01
PB - Institute of Electrical and Electronics Engineers (IEEE)
SP - 138-141
IS - 2
VL - 13
SN - 1051-8223
SN - 1558-2515
SN - 2378-7074
ER -
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@article{2003_Tolpygo,
author = {S. K. Tolpygo and A. Brinkman and A. A. Golubov and M Yu Kupriyanov},
title = {Nb/AlO/sub x//Al/AlO/sub x//Nb double-barrier junctions with high critical current densities: Influence of barrier asymmetry},
journal = {IEEE Transactions on Applied Superconductivity},
year = {2003},
volume = {13},
publisher = {Institute of Electrical and Electronics Engineers (IEEE)},
month = {jun},
url = {https://doi.org/10.1109/TASC.2003.813665},
number = {2},
pages = {138--141},
doi = {10.1109/TASC.2003.813665}
}
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MLA
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Tolpygo, S. K., et al. “Nb/AlO/sub x//Al/AlO/sub x//Nb double-barrier junctions with high critical current densities: Influence of barrier asymmetry.” IEEE Transactions on Applied Superconductivity, vol. 13, no. 2, Jun. 2003, pp. 138-141. https://doi.org/10.1109/TASC.2003.813665.