Advanced Materials, volume 32, issue 6, pages 1905734

Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices

Li Songtian 1, 2, 3, 4
Popov Zakhar 6, 7
Watanabe Takahiro 4, 8
Entani Shiro 3, 4
Sakuraba Y. 10
Naramoto Hiroshi 4
Sorokin Pavel B. 3, 4, 5, 6
Sakai Seiji 3, 4, 6
Publication typeJournal Article
Publication date2019-12-03
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor29.4
ISSN09359648, 15214095
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
Graphene-based vertical spin valves (SVs) are expected to offer a large magnetoresistance effect without impairing the electrical conductivity, which can pave the way for the next generation of high-speed and low-power-consumption storage and memory technologies. However, the graphene-based vertical SV has failed to prove its competence due to the lack of a graphene/ferromagnet heterostructure, which can provide highly efficient spin transport. Herein, the synthesis and spin-dependent electronic properties of a novel heterostructure consisting of single-layer graphene (SLG) and a half-metallic Co2 Fe(Ge0.5 Ga0.5 ) (CFGG) Heusler alloy ferromagnet are reported. The growth of high-quality SLG with complete coverage by ultrahigh-vacuum chemical vapor deposition on a magnetron-sputtered single-crystalline CFGG thin film is demonstrated. The quasi-free-standing nature of SLG and robust magnetism of CFGG at the SLG/CFGG interface are revealed through depth-resolved X-ray magnetic circular dichroism spectroscopy. Density functional theory (DFT) calculation results indicate that the inherent electronic properties of SLG and CFGG such as the linear Dirac band and half-metallic band structure are preserved in the vicinity of the interface. These exciting findings suggest that the SLG/CFGG heterostructure possesses distinctive advantages over other reported graphene/ferromagnet heterostructures, for realizing effective transport of highly spin-polarized electrons in graphene-based vertical SV and other advanced spintronic devices.

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Li S. et al. Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices // Advanced Materials. 2019. Vol. 32. No. 6. p. 1905734.
GOST all authors (up to 50) Copy
Li S., Larionov K. V., Popov Z., Watanabe T., Amemiya K., Entani S., Avramov P. V., Sakuraba Y., Naramoto H., Sorokin P. B., Sakai S. Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices // Advanced Materials. 2019. Vol. 32. No. 6. p. 1905734.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1002/adma.201905734
UR - https://doi.org/10.1002%2Fadma.201905734
TI - Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices
T2 - Advanced Materials
AU - Watanabe, Takahiro
AU - Naramoto, Hiroshi
AU - Li, Songtian
AU - Larionov, Konstantin V.
AU - Popov, Zakhar
AU - Amemiya, Kenta
AU - Entani, Shiro
AU - Avramov, Pavel V.
AU - Sakuraba, Y.
AU - Sorokin, Pavel B.
AU - Sakai, Seiji
PY - 2019
DA - 2019/12/03 00:00:00
PB - Wiley
SP - 1905734
IS - 6
VL - 32
SN - 0935-9648
SN - 1521-4095
ER -
BibTex |
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BibTex Copy
@article{2019_Li
author = {Takahiro Watanabe and Hiroshi Naramoto and Songtian Li and Konstantin V. Larionov and Zakhar Popov and Kenta Amemiya and Shiro Entani and Pavel V. Avramov and Y. Sakuraba and Pavel B. Sorokin and Seiji Sakai},
title = {Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices},
journal = {Advanced Materials},
year = {2019},
volume = {32},
publisher = {Wiley},
month = {dec},
url = {https://doi.org/10.1002%2Fadma.201905734},
number = {6},
pages = {1905734},
doi = {10.1002/adma.201905734}
}
MLA
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MLA Copy
Li, Songtian, et al. “Graphene/Half-Metallic Heusler Alloy: A Novel Heterostructure toward High-Performance Graphene Spintronic Devices.” Advanced Materials, vol. 32, no. 6, Dec. 2019, p. 1905734. https://doi.org/10.1002%2Fadma.201905734.
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