Crystallography Reports, volume 63, issue 7, pages 1178-1182

Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration

Publication type: Journal Article
Publication date: 2018-12-13
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ISSN: 10637745, 1562689X
General Chemistry
Condensed Matter Physics
General Materials Science
Abstract
The effect of the Al–Ga melt composition on the mass transfer processes occurring during silicon recrystallization has been investigated by the thermomigration method. The threshold temperatures of thermomigration onset are determined. The kinetic regularities of liquid zone thermomigration, related to the recrystallization temperature and liquid phase composition, are established. The silicon solubility is studied in wide ranges of temperature and Al–Ga melt composition. The results obtained are analyzed within the simple-solution model. Based on the experimental data on solubility, the parameters of interatomic interaction between components in the liquid phase are determined. The liquidus surface for the Si–Al–Ga ternary system is built in wide temperature and composition ranges. The results of studying the structural quality and electrical properties of recrystallized silicon layers are reported.
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Kuznetsov V. V., Rubtsov É. R., Seredin B. M. Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration // Crystallography Reports. 2018. Vol. 63. No. 7. pp. 1178-1182.
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Kuznetsov V. V., Rubtsov É. R., Seredin B. M. Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration // Crystallography Reports. 2018. Vol. 63. No. 7. pp. 1178-1182.
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TY - JOUR
DO - 10.1134/S1063774518070143
UR - https://doi.org/10.1134%2FS1063774518070143
TI - Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration
T2 - Crystallography Reports
AU - Kuznetsov, V. V.
AU - Rubtsov, É R
AU - Seredin, B M
PY - 2018
DA - 2018/12/13 00:00:00
PB - Pleiades Publishing
SP - 1178-1182
IS - 7
VL - 63
SN - 1063-7745
SN - 1562-689X
ER -
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@article{2018_Kuznetsov,
author = {V. V. Kuznetsov and É R Rubtsov and B M Seredin},
title = {Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration},
journal = {Crystallography Reports},
year = {2018},
volume = {63},
publisher = {Pleiades Publishing},
month = {dec},
url = {https://doi.org/10.1134%2FS1063774518070143},
number = {7},
pages = {1178--1182},
doi = {10.1134/S1063774518070143}
}
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Kuznetsov, V. V., et al. “Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration.” Crystallography Reports, vol. 63, no. 7, Dec. 2018, pp. 1178-1182. https://doi.org/10.1134%2FS1063774518070143.
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