Inorganic Materials, volume 40, issue 4, pages 327-330
Effect of the crystallographic orientation of GaAs substrates on the composition of Gax In1-x P layers
Publication type: Journal Article
Publication date: 2004-04-15
Journal:
Inorganic Materials
Quartile SCImago
Q3
Quartile WOS
Q4
Impact factor: 0.8
ISSN: 00201685, 16083172
Materials Chemistry
Metals and Alloys
Inorganic Chemistry
General Chemical Engineering
Abstract
The effect of the crystallographic orientation of GaAs substrates on the composition of Ga x In1 – x P solid solutions grown by liquid-phase heteroepitaxy is studied. It is shown that GaAs-lattice-matched Ga x In1 – x P solid solutions can be grown, under identical conditions, on (100), (111)А, and (111)В GaAs substrates using different melt compositions. The results are interpreted in terms of the contribution from the energy of the crystal–melt interface to the total energy of mixing of the solid solution.
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Journal of Nanoparticle Research
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Springer Nature
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Springer Nature
1 publication, 50%
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Kuznetsov V. V. et al. Effect of the crystallographic orientation of GaAs substrates on the composition of GaxIn1-xP layers // Inorganic Materials. 2004. Vol. 40. No. 4. pp. 327-330.
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Kuznetsov V. V., Lunin L. S., Ratushnyi V. I., Oliva E. V., Shishkov M. V. Effect of the crystallographic orientation of GaAs substrates on the composition of GaxIn1-xP layers // Inorganic Materials. 2004. Vol. 40. No. 4. pp. 327-330.
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TY - JOUR
DO - 10.1023/B:INMA.0000023948.90214.a7
UR - https://doi.org/10.1023%2FB%3AINMA.0000023948.90214.a7
TI - Effect of the crystallographic orientation of GaAs substrates on the composition of GaxIn1-xP layers
T2 - Inorganic Materials
AU - Kuznetsov, V. V.
AU - Lunin, L S
AU - Ratushnyi, V. I.
AU - Oliva, E V
AU - Shishkov, M V
PY - 2004
DA - 2004/04/15 00:00:00
PB - Pleiades Publishing
SP - 327-330
IS - 4
VL - 40
SN - 0020-1685
SN - 1608-3172
ER -
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@article{2004_Kuznetsov,
author = {V. V. Kuznetsov and L S Lunin and V. I. Ratushnyi and E V Oliva and M V Shishkov},
title = {Effect of the crystallographic orientation of GaAs substrates on the composition of GaxIn1-xP layers},
journal = {Inorganic Materials},
year = {2004},
volume = {40},
publisher = {Pleiades Publishing},
month = {apr},
url = {https://doi.org/10.1023%2FB%3AINMA.0000023948.90214.a7},
number = {4},
pages = {327--330},
doi = {10.1023/B:INMA.0000023948.90214.a7}
}
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Kuznetsov, V. V., et al. “Effect of the crystallographic orientation of GaAs substrates on the composition of GaxIn1-xP layers.” Inorganic Materials, vol. 40, no. 4, Apr. 2004, pp. 327-330. https://doi.org/10.1023%2FB%3AINMA.0000023948.90214.a7.
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