Monolithic Integration of GaN Thin Film and GaN Nanorods Pixels: Facile Growth of InGaN/GaN Quantum Wells for the Realization of Full Color Micro‐LED Display

In this work, an innovative method is introduced for fabricating large‐area micro‐LEDs (µLEDs) specifically for green and blue emission through a combination of GaN thin film and GaN nanorods (NRs) on the orientation‐controlled template designed for its integration into display systems. Herein, an advanced lithography technique is employed to construct the template, specifically designed with the pattern to feature the regions of GaN thin film and GaN NRs for facilitating the wavelength control by utilizing indium incorporation efficiency of the different crystallographic orientations of GaN. Through metal–organic chemical vapor deposition (MOCVD) grown active region of InGaN/GaN heterostructure on the orientation‐controlled template, tunable emission in the visible region is realized and confirmed through comprehensive optical and metrological characterization. Furthermore, the feasibility of fabricating the green and blue µLED pixels on the orientation‐controlled template is affirmed. Lastly, the orientation‐controlled template of green and blue µLED pixels are successfully integrated to demonstrate a prototype full color display module. Overall, the approach of combining advanced lithographic techniques to prepare the orientation‐controlled template and MOCVD growth of the InGaN/GaN heterostructure showcased a path for fabricating full‐color pixel arrays for display technologies.