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Advanced Electronic Materials, volume 8, issue 5, pages 2101039

Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection

Publication typeJournal Article
Publication date2022-01-05
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor6.2
ISSN2199160X
Electronic, Optical and Magnetic Materials
Abstract

Ultrathin organic field effect transistors (OFETs) demonstrate great potential as highly sensitive gas sensors since its electrical performance strongly depends on the environment. However, fabrication of high performance OFETs with reliable operational stability for continuous measurements by fast, rather simple, and inexpensive technique is still a challenge. Herein, electrical and sensing properties of ultrathin OFETs based on siloxane dimers of benzothieno[3,2‐b][1]benzothiophene (BTBT) with different aliphatic spacer lengths fabricated by Langmuir–Blodgett, Langmuir–Schaefer (LS) or spin‐coating techniques are studied, compared and optimized. Investigation of the influence of interface dielectric layer on electrical performance and operational stability of the devices allowed obtaining uniform low‐defect ultrathin semiconducting layers responsible for improved electrical performance. Field‐effect mobility up to 0.47 cm2 V−1 s−1 is achieved for the devices based on the dimer with undecylenic spacer between the BTBT core and disiloxane central fragment fabricated by LS method on the top of poly(methyl methacrylate) interface layer. Promising operational stability lead to advanced sensory properties demonstrated by sensing of ethanethiol with the limit of detection of 30 ppb in the humid air, which is a record value for portable sensing technologies.

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Trul A. A. et al. Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection // Advanced Electronic Materials. 2022. Vol. 8. No. 5. p. 2101039.
GOST all authors (up to 50) Copy
Trul A. A., Chekusova V. P., Anisimov D. S., Borshchev O. V., Polinskaya M. S., Agina E. V., Ponomarenko S. A. Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection // Advanced Electronic Materials. 2022. Vol. 8. No. 5. p. 2101039.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1002/aelm.202101039
UR - https://doi.org/10.1002%2Faelm.202101039
TI - Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection
T2 - Advanced Electronic Materials
AU - Trul, Askold A.
AU - Chekusova, Viktoria P.
AU - Anisimov, Daniil S
AU - Borshchev, Oleg V.
AU - Polinskaya, Marina S.
AU - Agina, Elena V.
AU - Ponomarenko, Sergey A.
PY - 2022
DA - 2022/01/05 00:00:00
PB - Wiley
SP - 2101039
IS - 5
VL - 8
SN - 2199-160X
ER -
BibTex |
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BibTex Copy
@article{2022_Trul,
author = {Askold A. Trul and Viktoria P. Chekusova and Daniil S Anisimov and Oleg V. Borshchev and Marina S. Polinskaya and Elena V. Agina and Sergey A. Ponomarenko},
title = {Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection},
journal = {Advanced Electronic Materials},
year = {2022},
volume = {8},
publisher = {Wiley},
month = {jan},
url = {https://doi.org/10.1002%2Faelm.202101039},
number = {5},
pages = {2101039},
doi = {10.1002/aelm.202101039}
}
MLA
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MLA Copy
Trul, Askold A., et al. “Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection.” Advanced Electronic Materials, vol. 8, no. 5, Jan. 2022, p. 2101039. https://doi.org/10.1002%2Faelm.202101039.
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