Angewandte Chemie - International Edition, volume 52, issue 6, pages 1735-1738
Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis
Publication type: Journal Article
Publication date: 2013-01-07
Q1
Q1
SJR: 5.300
CiteScore: 26.6
Impact factor: 16.1
ISSN: 14337851, 15213773
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GOST
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Lin Z., Wang X. Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis // Angewandte Chemie - International Edition. 2013. Vol. 52. No. 6. pp. 1735-1738.
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Lin Z., Wang X. Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis // Angewandte Chemie - International Edition. 2013. Vol. 52. No. 6. pp. 1735-1738.
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TY - JOUR
DO - 10.1002/anie.201209017
UR - https://doi.org/10.1002/anie.201209017
TI - Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis
T2 - Angewandte Chemie - International Edition
AU - Lin, Zhenzhen
AU - Wang, Xinchen
PY - 2013
DA - 2013/01/07
PB - Wiley
SP - 1735-1738
IS - 6
VL - 52
SN - 1433-7851
SN - 1521-3773
ER -
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BibTex (up to 50 authors)
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@article{2013_Lin,
author = {Zhenzhen Lin and Xinchen Wang},
title = {Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis},
journal = {Angewandte Chemie - International Edition},
year = {2013},
volume = {52},
publisher = {Wiley},
month = {jan},
url = {https://doi.org/10.1002/anie.201209017},
number = {6},
pages = {1735--1738},
doi = {10.1002/anie.201209017}
}
Cite this
MLA
Copy
Lin, Zhenzhen, and Xinchen Wang. “Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis.” Angewandte Chemie - International Edition, vol. 52, no. 6, Jan. 2013, pp. 1735-1738. https://doi.org/10.1002/anie.201209017.