Plasma Processes and Polymers, volume 18, issue 11, pages 2100078

Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF ₄ /H ₂ plasma at different substrate temperatures

Sheng-Tsung Hsiao ¹

N Britun ¹

Thi Thuy Nga Nguyen ¹

Takayoshi Tsutsumi ¹

Kenji Ishikawa ¹

Makoto Sekine ¹

Masaru Hori ¹

Show full list: 7 authors

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Center for Low‐Temperature Plasma Sciences Nagoya University Nagoya Japan |

Publication type: Journal Article

Publication date: 2021-08-04

Wiley

Journal: Plasma Processes and Polymers

scimago Q2

SJR: 0.562

CiteScore: 6.6

Impact factor: 2.9

ISSN: 16128850, 16128869

DOI: 10.1002/ppap.202100078

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Condensed Matter Physics

Polymers and Plastics

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CITATIONS

12 Total citations

10 Recent citations

1.49 Field Citation Ratio

n/a Relative Citation Ratio

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GOST |

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Hsiao S. et al. Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF 4 /H 2 plasma at different substrate temperatures // Plasma Processes and Polymers. 2021. Vol. 18. No. 11. p. 2100078.

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Hsiao S., Britun N., Nguyen T. T. N., Tsutsumi T., Ishikawa K., Sekine M., Hori M. Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF 4 /H 2 plasma at different substrate temperatures // Plasma Processes and Polymers. 2021. Vol. 18. No. 11. p. 2100078.

RIS |

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RIS Copy

TY - JOUR

DO - 10.1002/ppap.202100078

UR - https://doi.org/10.1002/ppap.202100078

TI - Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF 4 /H 2 plasma at different substrate temperatures

T2 - Plasma Processes and Polymers

AU - Hsiao, Sheng-Tsung

AU - Britun, N

AU - Nguyen, Thi Thuy Nga

AU - Tsutsumi, Takayoshi

AU - Ishikawa, Kenji

AU - Sekine, Makoto

AU - Hori, Masaru

PY - 2021

DA - 2021/08/04

PB - Wiley

SP - 2100078

IS - 11

VL - 18

SN - 1612-8850

SN - 1612-8869

ER -

BibTex |

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BibTex (up to 50 authors) Copy

@article{2021_Hsiao,

author = {Sheng-Tsung Hsiao and N Britun and Thi Thuy Nga Nguyen and Takayoshi Tsutsumi and Kenji Ishikawa and Makoto Sekine and Masaru Hori},

title = {Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF 4 /H 2 plasma at different substrate temperatures},

journal = {Plasma Processes and Polymers},

year = {2021},

volume = {18},

publisher = {Wiley},

month = {aug},

url = {https://doi.org/10.1002/ppap.202100078},

number = {11},

pages = {2100078},

doi = {10.1002/ppap.202100078}

}

MLA

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MLA Copy

Hsiao, Sheng-Tsung, et al. “Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF 4 /H 2 plasma at different substrate temperatures.” Plasma Processes and Polymers, vol. 18, no. 11, Aug. 2021, p. 2100078. https://doi.org/10.1002/ppap.202100078.

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Publisher

Wiley

Journal

Plasma Processes and Polymers

scimago Q2

SJR

0.562

CiteScore

6.6

Impact factor

2.9

ISSN

16128850 (Print)

16128869 (Electronic)