All‐GaN‐Based Monolithic MIS‐HEMT Integrated Micro‐LED Pixels for Active‐Matrix Displays
An all‐GaN‐based monolithic active‐matrix micro‐LED system that integrates metal‐insulator‐semiconductor high‐electron‐mobility transistors (MIS HEMTs) with light‐emitting diodes (LEDs) is demonstrated. The proposed structure employs direct electron injection from the 2D electron gas (2DEG) in a HEMT, serving as the n‐type layer, into the quantum wells of the LEDs. A 2‐HEMT‐1‐LED pixel configuration is fabricated with one epitaxial growth, enabling the precise control of LED light output through a combination of select and drive HEMTs. The fabricated pixel achieved a maximum optical output density of 0.5 Wcm−2. A 2 × 2 pixel matrix is constructed with row and column lines connected via select HEMTs, demonstrating the capability of the 2‐HEMT‐1‐LED pixel configuration for individual LED control.
