Physica Status Solidi (B): Basic Research

Photo‐Gain Effect in κ‐Ga2O3 UV‐C Photoresistors Induced by Trapping of Photogenerated Holes

Andrea Asteriti 1
, 
G. Verzellesi 1
, 
Giovanna Sozzi 2
, 
Andrea Baraldi 3
, 
Piero Mazzolini 3, 4
, 
Abderrahim Moumen 3
, 
Antonella Parisini 3
, 
Maura Pavesi 3
, 
Matteo Bosi 4
, 
Roberto Mosca 4
, 
Luca Seravalli 4
, 
Roberto Fornari 3, 4
Show full list: 12 authors
1
 
2
 
3
 
4
 
IMEM‐CNR Institute of Materials for Electronics and Magnetism I‐43124 Parma Italy | 
Publication type: Journal Article
Publication date: 2025-02-04
scimago Q3
SJR: 0.388
CiteScore: 3.3
Impact factor: 1.5
ISSN: 03701972, 15213951
Abstract

The “photo‐gain effect” amplifying the DC photocurrent of κ‐Ga2O3 UV‐C photoresistors is analyzed by means of 2D numerical simulations and linked to the capture of photogenerated holes by deep donor levels, probably associated with oxygen vacancies. The resulting ionization of the deep donors leads to an increase in the electron density, hence to enhanced conductivity under illumination.

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