High‐Performance Stable Hybrid Inorganic‐Organic Light‐Emitting Transistor

ABSTRACT

Light‐emitting transistors (LETs) as novel integrated optoelectronic devices demonstrate great potential applications in smart displays and visual intelligent perception. The construction of high‐performance area‐emission LETs with low power consumption and good reliability is urgently needed for advancing their applications, however, this integration has not been realized within a single device. Herein, we demonstrate a kind of planar‐driven hybrid LET (PDHLET) that makes use of the unique advantages of high mobility and stability of inorganic and organic semiconductors in the same device. By incorporating an indium‐zinc‐gallium‐oxide (InZnGeO) conducting layer and organic emissive layer, a high‐performance stable blue‐emissive PDHLET is constructed, giving a high I_on/I_off ratio approaching 6.1 × 10⁸ and a low V_on of 5.5 V along with maximum brightness of 1264 cd/m² as well as small V_TH shift of 0.5 V after 1000 s positive stress bias. Finally, a systematic simulation, including charge concentration and Langevin recombination rate, is carried out on PDHLET for the first time, demonstrating good consistency with experimental results. This confirms the uniformity of high redistributed charge concentration in the InZnGeO conducting layer which thus enables good area emission. This study provides a new avenue for constructing high‐performance stable LETs to advance various field applications.