Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO₂ by Cryogenic‐Assisted Surface Reactions

Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub‐nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface‐adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in the ER of SiO₂ using CF₄/H₂ plasmas. The ER increases twofold when plasma with H₂/(CF₄ + H₂) = 33% is used and the substrate temperature is lowered from 20 to −60 °C. The adsorption of HF and H₂O on the SiO₂ surface at cryogenic temperatures is confirmed using in situ Fourier transform infrared spectroscopy. The synergistic interactions of the surface‐adsorbed HF/H₂O as etching catalysts and plasma species result in the ER enhancement. Therefore, a mechanism called “pseudo‐wet plasma etching” is proposed to explain the cryogenic etching process. This synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed chemistry, and the material being etched, rather than interactions between ion and gas phase, as observed in the conventional RIE.