Advanced Functional Materials, volume 22, issue 8, pages 1741-1748

High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots

Publication typeJournal Article
Publication date2012-02-13
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor19
ISSN1616301X, 16163028
Electronic, Optical and Magnetic Materials
Electrochemistry
Condensed Matter Physics
Biomaterials
Abstract
Chemically synthesized nanocrystal quantum dots (NQDs) are promising materials for applications in solution-processable optoelectronic devices such as light emitting diodes, photodetectors, and solar cells. Here, we fabricate and study two types of p-n junction photodiodes in which the photoactive p-layer is made from PbS NQDs while the transparent n-layer is fabricated from wide bandgap oxides (ZnO or TiO 2). By using a p-n junction architecture we are able to significantly reduce the dark current compared to earlier Schottky junction devices without reducing external quantum efficiency (EQE), which reaches values of up to ∼80%. The use of this device architecture also allows us to significantly reduce noise and obtain high detectivity (>10 12 cm Hz 1/2 W -1) extending to the near infrared past 1 μm. We observe that the spectral shape of the photoresponse exhibits a significant dependence on applied bias, and specifically, the EQE sharply increases around 500-600 nm at reverse biases greater than 1 V. We attribute this behavior to a turn-on of an additional contribution to the photocurrent due to electrons excited to the conduction band from the occupied mid-gap states.

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Pal B. N. et al. High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots // Advanced Functional Materials. 2012. Vol. 22. No. 8. pp. 1741-1748.
GOST all authors (up to 50) Copy
Pal B. N., Robel I., Mohite A. D., Laocharoensuk R., Werder D. J., Klimov V. I. High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots // Advanced Functional Materials. 2012. Vol. 22. No. 8. pp. 1741-1748.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1002/adfm.201102532
UR - https://doi.org/10.1002/adfm.201102532
TI - High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots
T2 - Advanced Functional Materials
AU - Pal, Bhola N
AU - Robel, Istvan
AU - Mohite, Aditya D.
AU - Laocharoensuk, Rawiwan
AU - Werder, Donald J
AU - Klimov, Victor I.
PY - 2012
DA - 2012/02/13 00:00:00
PB - Wiley
SP - 1741-1748
IS - 8
VL - 22
SN - 1616-301X
SN - 1616-3028
ER -
BibTex |
Cite this
BibTex Copy
@article{2012_Pal,
author = {Bhola N Pal and Istvan Robel and Aditya D. Mohite and Rawiwan Laocharoensuk and Donald J Werder and Victor I. Klimov},
title = {High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots},
journal = {Advanced Functional Materials},
year = {2012},
volume = {22},
publisher = {Wiley},
month = {feb},
url = {https://doi.org/10.1002/adfm.201102532},
number = {8},
pages = {1741--1748},
doi = {10.1002/adfm.201102532}
}
MLA
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MLA Copy
Pal, Bhola N., et al. “High-Sensitivity p-n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots.” Advanced Functional Materials, vol. 22, no. 8, Feb. 2012, pp. 1741-1748. https://doi.org/10.1002/adfm.201102532.
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