Advanced Functional Materials, volume 25, issue 8, pages 1233-1238

Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes

Jae Woong Lee 1
Myeong Jin Kim 1
Franky So 1
1
 
Department of Materials Science and Engineering; University of Florida; Gainesville FL 32611 USA
Publication typeJournal Article
Publication date2015-01-21
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor19
ISSN1616301X, 16163028
Electronic, Optical and Magnetic Materials
Electrochemistry
Condensed Matter Physics
Biomaterials
Abstract
High gain and low dark current solution-processed colloidal PbS quantum dots infrared (IR) PIN photodetectors with IR sensitivity up to 1500 nm are demonstrated. The low dark current is due to the P-I-N structure with both electron and hole blockers. The high gain in our IR photodiodes is due to the enhancement of electron tunneling injection through the 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC) electron blocker under IR illumination resulting from a distorted electron blocking barrier in the presence of photo-generated holes trapped in the TAPC electron blocker. It is further found that the trap states in the TAPC layer are generated by the Ag atoms penetrated in the TAPC layer during the thermal evaporation process. The resulting photodetectors have a high detectivity value of 7 × 1013 Jones, which is even higher than that of a commercial InGaAs photodiode.

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Lee J. W., Kim M. J., So F. Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes // Advanced Functional Materials. 2015. Vol. 25. No. 8. pp. 1233-1238.
GOST all authors (up to 50) Copy
Lee J. W., Kim M. J., So F. Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes // Advanced Functional Materials. 2015. Vol. 25. No. 8. pp. 1233-1238.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1002/adfm.201403673
UR - https://doi.org/10.1002/adfm.201403673
TI - Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes
T2 - Advanced Functional Materials
AU - Lee, Jae Woong
AU - Kim, Myeong Jin
AU - So, Franky
PY - 2015
DA - 2015/01/21 00:00:00
PB - Wiley
SP - 1233-1238
IS - 8
VL - 25
SN - 1616-301X
SN - 1616-3028
ER -
BibTex |
Cite this
BibTex Copy
@article{2015_Lee,
author = {Jae Woong Lee and Myeong Jin Kim and Franky So},
title = {Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes},
journal = {Advanced Functional Materials},
year = {2015},
volume = {25},
publisher = {Wiley},
month = {jan},
url = {https://doi.org/10.1002/adfm.201403673},
number = {8},
pages = {1233--1238},
doi = {10.1002/adfm.201403673}
}
MLA
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MLA Copy
Lee, Jae Woong, et al. “Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes.” Advanced Functional Materials, vol. 25, no. 8, Jan. 2015, pp. 1233-1238. https://doi.org/10.1002/adfm.201403673.
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