Advanced Functional Materials

, volume 30 , issue 18 , pages 1901971

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Xu Jing ¹

Yury Yuryevich Illarionov ^{2, 3}

Eilam Yalon ⁴

Peng Zhou ⁵

Tibor Grasser ²

Yuanyuan Shi ^{4, 6}

Mario Lanza ¹

Hide authors affiliations Show authors affiliations: 6 affiliations

Institute of Functional Nano and Soft Materials (FUNSOM)Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China |

Institute for Microelectronics (TU Wien) Gusshausstrasse 27‐29 Vienna 1040 Austria |

Ioffe Physical‐Technical Institute Polytechnicheskaya 26 St. Petersburg 194021 Russia |

⁴

Andrew and Erna Viterbi Faculty of Electrical EngineeringTechnion–Israel Institute of Technology Haifa 32000 Israel |

⁵

State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University Shanghai 200433 China |

⁶

Materials Science and Engineering DepartmentGuangdong Technion–Israel Institute of Technology 241 Daxue Road Shantou 515063 China |

Publication type: Journal Article

Publication date: 2019-07-04

Wiley

Advanced Functional Materials

scimago Q1

wos Q1

SJR: 5.439

CiteScore: 27.7

Impact factor: 19.0

ISSN: 1616301X, 16163028

DOI: 10.1002/adfm.201901971

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Electronic, Optical and Magnetic Materials

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GOST |

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GOST Copy

Jing X. et al. Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects // Advanced Functional Materials. 2019. Vol. 30. No. 18. p. 1901971.

GOST all authors (up to 50) Copy

Jing X., Illarionov Y. Y., Yalon E., Zhou P., Grasser T., Shi Y., Lanza M. Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects // Advanced Functional Materials. 2019. Vol. 30. No. 18. p. 1901971.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1002/adfm.201901971

UR - https://doi.org/10.1002/adfm.201901971

TI - Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

T2 - Advanced Functional Materials

AU - Jing, Xu

AU - Illarionov, Yury Yuryevich

AU - Yalon, Eilam

AU - Zhou, Peng

AU - Grasser, Tibor

AU - Shi, Yuanyuan

AU - Lanza, Mario

PY - 2019

DA - 2019/07/04

PB - Wiley

SP - 1901971

IS - 18

VL - 30

SN - 1616-301X

SN - 1616-3028

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2019_Jing,

author = {Xu Jing and Yury Yuryevich Illarionov and Eilam Yalon and Peng Zhou and Tibor Grasser and Yuanyuan Shi and Mario Lanza},

title = {Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects},

journal = {Advanced Functional Materials},

year = {2019},

volume = {30},

publisher = {Wiley},

month = {jul},

url = {https://doi.org/10.1002/adfm.201901971},

number = {18},

pages = {1901971},

doi = {10.1002/adfm.201901971}

}

MLA

Cite this

MLA Copy

Jing, Xu, et al. “Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects.” Advanced Functional Materials, vol. 30, no. 18, Jul. 2019, p. 1901971. https://doi.org/10.1002/adfm.201901971.

Publisher

Wiley

Journal

Advanced Functional Materials

scimago Q1

wos Q1

SJR

5.439

CiteScore

27.7

Impact factor

19.0

ISSN

1616301X (Print)

16163028 (Electronic)