Advanced Functional Materials

, том 30 , издание 18 , страницы 1901971

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Xu Jing ¹

Yury Yuryevich Illarionov ^{2, 3}

Eilam Yalon ⁴

Peng Zhou ⁵

Tibor Grasser ²

Yuanyuan Shi ^{4, 6}

Mario Lanza ¹

Скрыть аффилиации авторов Показать аффилиации авторов: 6 аффилиаций

Institute of Functional Nano and Soft Materials (FUNSOM)Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China |

Institute for Microelectronics (TU Wien) Gusshausstrasse 27‐29 Vienna 1040 Austria |

Ioffe Physical‐Technical Institute Polytechnicheskaya 26 St. Petersburg 194021 Russia |

⁴

Andrew and Erna Viterbi Faculty of Electrical EngineeringTechnion–Israel Institute of Technology Haifa 32000 Israel |

⁵

State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University Shanghai 200433 China |

⁶

Materials Science and Engineering DepartmentGuangdong Technion–Israel Institute of Technology 241 Daxue Road Shantou 515063 China |

Тип публикации: Journal Article

Дата публикации: 2019-07-04

Wiley

Advanced Functional Materials

scimago Q1

wos Q1

БС1

SJR: 5.439

CiteScore: 27.7

Impact factor: 19.0

ISSN: 1616301X, 16163028

DOI: 10.1002/adfm.201901971

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Electronic, Optical and Magnetic Materials

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ГОСТ |

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ГОСТ Скопировать

Jing X. et al. Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects // Advanced Functional Materials. 2019. Vol. 30. No. 18. p. 1901971.

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Jing X., Illarionov Y. Y., Yalon E., Zhou P., Grasser T., Shi Y., Lanza M. Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects // Advanced Functional Materials. 2019. Vol. 30. No. 18. p. 1901971.

RIS |

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TY - JOUR

DO - 10.1002/adfm.201901971

UR - https://doi.org/10.1002/adfm.201901971

TI - Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

T2 - Advanced Functional Materials

AU - Jing, Xu

AU - Illarionov, Yury Yuryevich

AU - Yalon, Eilam

AU - Zhou, Peng

AU - Grasser, Tibor

AU - Shi, Yuanyuan

AU - Lanza, Mario

PY - 2019

DA - 2019/07/04

PB - Wiley

SP - 1901971

IS - 18

VL - 30

SN - 1616-301X

SN - 1616-3028

ER -

BibTex |

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@article{2019_Jing,

author = {Xu Jing and Yury Yuryevich Illarionov and Eilam Yalon and Peng Zhou and Tibor Grasser and Yuanyuan Shi and Mario Lanza},

title = {Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects},

journal = {Advanced Functional Materials},

year = {2019},

volume = {30},

publisher = {Wiley},

month = {jul},

url = {https://doi.org/10.1002/adfm.201901971},

number = {18},

pages = {1901971},

doi = {10.1002/adfm.201901971}

}

MLA

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MLA Скопировать

Jing, Xu, et al. “Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects.” Advanced Functional Materials, vol. 30, no. 18, Jul. 2019, p. 1901971. https://doi.org/10.1002/adfm.201901971.

Издатель

Wiley

Журнал

Advanced Functional Materials

scimago Q1

wos Q1

БС1

SJR

5.439

CiteScore

27.7

Impact factor

19.0

ISSN

1616301X (Print)

16163028 (Electronic)