Advanced Materials, volume 22, issue 23, pages 2565-2569

A water-gate organic field-effect transistor.

Loïg Kergoat 1
Lars Herlogsson 2
DANIELE BRAGA 1
Benoit Piro 1
Minh‐Chau Pham 1
Xavier Crispin 2
Magnus Berggren 2
Gilles Horowitz 1
Publication typeJournal Article
Publication date2010-05-20
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor29.4
ISSN09359648, 15214095
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a de ...

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GOST |
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GOST Copy
Kergoat L. et al. A water-gate organic field-effect transistor. // Advanced Materials. 2010. Vol. 22. No. 23. pp. 2565-2569.
GOST all authors (up to 50) Copy
Kergoat L., Herlogsson L., BRAGA D., Piro B., Pham M., Crispin X., Berggren M., Horowitz G. A water-gate organic field-effect transistor. // Advanced Materials. 2010. Vol. 22. No. 23. pp. 2565-2569.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1002/adma.200904163
UR - https://doi.org/10.1002/adma.200904163
TI - A water-gate organic field-effect transistor.
T2 - Advanced Materials
AU - Kergoat, Loïg
AU - Herlogsson, Lars
AU - BRAGA, DANIELE
AU - Piro, Benoit
AU - Pham, Minh‐Chau
AU - Crispin, Xavier
AU - Berggren, Magnus
AU - Horowitz, Gilles
PY - 2010
DA - 2010/05/20 00:00:00
PB - Wiley
SP - 2565-2569
IS - 23
VL - 22
SN - 0935-9648
SN - 1521-4095
ER -
BibTex |
Cite this
BibTex Copy
@article{2010_Kergoat,
author = {Loïg Kergoat and Lars Herlogsson and DANIELE BRAGA and Benoit Piro and Minh‐Chau Pham and Xavier Crispin and Magnus Berggren and Gilles Horowitz},
title = {A water-gate organic field-effect transistor.},
journal = {Advanced Materials},
year = {2010},
volume = {22},
publisher = {Wiley},
month = {may},
url = {https://doi.org/10.1002/adma.200904163},
number = {23},
pages = {2565--2569},
doi = {10.1002/adma.200904163}
}
MLA
Cite this
MLA Copy
Kergoat, Loïg, et al. “A water-gate organic field-effect transistor..” Advanced Materials, vol. 22, no. 23, May. 2010, pp. 2565-2569. https://doi.org/10.1002/adma.200904163.
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