Advanced Materials, volume 24, issue 20, pages 2715-2720

Understanding Charge Transfer at PbS-Decorated Graphene Surfaces toward a Tunable Photosensor

Publication typeJournal Article
Publication date2012-04-16
scimago Q1
SJR9.191
CiteScore43.0
Impact factor27.4
ISSN09359648, 15214095
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in a single pristine graphene device. These results highlight the vital importance of interface modification as a powerful tool for creating future ultrasensitive optoelectronic devices.
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