Advanced Materials, volume 24, issue 43, pages 5878-5883

Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity.

Publication typeJournal Article
Publication date2012-08-31
scimago Q1
SJR9.191
CiteScore43.0
Impact factor27.4
ISSN09359648, 15214095
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.

Top-30

Journals

5
10
15
20
25
30
35
5
10
15
20
25
30
35

Publishers

20
40
60
80
100
120
140
160
180
20
40
60
80
100
120
140
160
180
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Share
Cite this
GOST | RIS | BibTex | MLA
Found error?