volume 25 issue 1 pages 137-141

Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors

Publication typeJournal Article
Publication date2012-10-02
scimago Q1
wos Q1
SJR8.851
CiteScore39.4
Impact factor26.8
ISSN09359648, 15214095
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.
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GOST |
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GOST Copy
Lhuillier E. et al. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.
GOST all authors (up to 50) Copy
Lhuillier E., Keuleyan S. E., Zolotavin P., Guyot-Sionnest P. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1002/adma.201203012
UR - https://doi.org/10.1002/adma.201203012
TI - Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors
T2 - Advanced Materials
AU - Lhuillier, Emmanuel
AU - Keuleyan, Sean E.
AU - Zolotavin, Pavlo
AU - Guyot-Sionnest, Philippe
PY - 2012
DA - 2012/10/02
PB - Wiley
SP - 137-141
IS - 1
VL - 25
PMID - 23027629
SN - 0935-9648
SN - 1521-4095
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2012_Lhuillier,
author = {Emmanuel Lhuillier and Sean E. Keuleyan and Pavlo Zolotavin and Philippe Guyot-Sionnest},
title = {Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors},
journal = {Advanced Materials},
year = {2012},
volume = {25},
publisher = {Wiley},
month = {oct},
url = {https://doi.org/10.1002/adma.201203012},
number = {1},
pages = {137--141},
doi = {10.1002/adma.201203012}
}
MLA
Cite this
MLA Copy
Lhuillier, Emmanuel, et al. “Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors.” Advanced Materials, vol. 25, no. 1, Oct. 2012, pp. 137-141. https://doi.org/10.1002/adma.201203012.