Advanced Materials

, том 25 , издание 1 , страницы 137-141

Mid-Infrared HgTe/As₂S₃Field Effect Transistors and Photodetectors

Тип публикации: Journal Article

Дата публикации: 2012-10-02

Wiley

Advanced Materials

scimago Q1

wos Q1

БС1

SJR: 9.191

CiteScore: 43

Impact factor: 26.8

ISSN: 09359648, 15214095

DOI: 10.1002/adma.201203012

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PubMed ID: 23027629

General Materials Science

Mechanical Engineering

Mechanics of Materials

Краткое описание

HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

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Метрики

123

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ГОСТ |

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ГОСТ Скопировать

Lhuillier E. et al. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.

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Lhuillier E., Keuleyan S. E., Zolotavin P., Guyot-Sionnest P. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.

RIS |

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TY - JOUR

DO - 10.1002/adma.201203012

UR - https://doi.org/10.1002/adma.201203012

TI - Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors

T2 - Advanced Materials

AU - Lhuillier, Emmanuel

AU - Keuleyan, Sean E.

AU - Zolotavin, Pavlo

AU - Guyot-Sionnest, Philippe

PY - 2012

DA - 2012/10/02

PB - Wiley

SP - 137-141

IS - 1

VL - 25

PMID - 23027629

SN - 0935-9648

SN - 1521-4095

ER -

BibTex |

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@article{2012_Lhuillier,

author = {Emmanuel Lhuillier and Sean E. Keuleyan and Pavlo Zolotavin and Philippe Guyot-Sionnest},

title = {Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors},

journal = {Advanced Materials},

year = {2012},

volume = {25},

publisher = {Wiley},

month = {oct},

url = {https://doi.org/10.1002/adma.201203012},

number = {1},

pages = {137--141},

doi = {10.1002/adma.201203012}

}

MLA

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MLA Скопировать

Lhuillier, Emmanuel, et al. “Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors.” Advanced Materials, vol. 25, no. 1, Oct. 2012, pp. 137-141. https://doi.org/10.1002/adma.201203012.

Издатель

Wiley

Журнал

Advanced Materials

scimago Q1

wos Q1

БС1

SJR

9.191

CiteScore

Impact factor

26.8

ISSN

09359648 (Print)

15214095 (Electronic)