Advanced Materials, volume 25, issue 1, pages 137-141

Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors

Publication typeJournal Article
Publication date2012-10-02
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor29.4
ISSN09359648, 15214095
General Materials Science
Mechanical Engineering
Mechanics of Materials
Abstract
HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

Top-30

Citations by journals

1
2
3
4
5
6
7
8
Nano Letters
8 publications, 7.21%
Journal of Physical Chemistry C
7 publications, 6.31%
ACS applied materials & interfaces
7 publications, 6.31%
ACS Photonics
7 publications, 6.31%
ACS Nano
6 publications, 5.41%
Journal of Materials Chemistry C
5 publications, 4.5%
Advanced Materials
4 publications, 3.6%
Chemistry of Materials
4 publications, 3.6%
Nanoscale
3 publications, 2.7%
Proceedings of SPIE - The International Society for Optical Engineering
3 publications, 2.7%
Applied Physics Letters
2 publications, 1.8%
Coatings
2 publications, 1.8%
Frontiers in Chemistry
2 publications, 1.8%
Nature Communications
2 publications, 1.8%
Light: Science and Applications
2 publications, 1.8%
Nanotechnology
2 publications, 1.8%
Physica Status Solidi (A) Applications and Materials Science
2 publications, 1.8%
Advanced Optical Materials
2 publications, 1.8%
Advanced Functional Materials
2 publications, 1.8%
Chemical Reviews
2 publications, 1.8%
Materials
2 publications, 1.8%
ACS Applied Electronic Materials
2 publications, 1.8%
Optical Materials Express
2 publications, 1.8%
Journal of Nanomaterials
1 publication, 0.9%
Nanomaterials
1 publication, 0.9%
Micromachines
1 publication, 0.9%
Journal of Electronic Materials
1 publication, 0.9%
Nano Convergence
1 publication, 0.9%
MRS Advances
1 publication, 0.9%
1
2
3
4
5
6
7
8

Citations by publishers

5
10
15
20
25
30
35
40
45
American Chemical Society (ACS)
45 publications, 40.54%
Wiley
15 publications, 13.51%
Royal Society of Chemistry (RSC)
10 publications, 9.01%
Springer Nature
7 publications, 6.31%
Multidisciplinary Digital Publishing Institute (MDPI)
6 publications, 5.41%
Elsevier
4 publications, 3.6%
SPIE
3 publications, 2.7%
American Institute of Physics (AIP)
2 publications, 1.8%
Frontiers Media S.A.
2 publications, 1.8%
IOP Publishing
2 publications, 1.8%
IEEE
2 publications, 1.8%
Optical Society of America
2 publications, 1.8%
American Association for the Advancement of Science (AAAS)
2 publications, 1.8%
Hindawi Limited
1 publication, 0.9%
Materials Research Society
1 publication, 0.9%
Pleiades Publishing
1 publication, 0.9%
Walter de Gruyter
1 publication, 0.9%
Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 0.9%
5
10
15
20
25
30
35
40
45
  • We do not take into account publications without a DOI.
  • Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
  • Statistics recalculated weekly.

Are you a researcher?

Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
Share
Cite this
GOST |
Cite this
GOST Copy
Lhuillier E. et al. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.
GOST all authors (up to 50) Copy
Lhuillier E., Keuleyan S. E., Zolotavin P., Guyot-Sionnest P. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1002/adma.201203012
UR - https://doi.org/10.1002/adma.201203012
TI - Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors
T2 - Advanced Materials
AU - Lhuillier, Emmanuel
AU - Keuleyan, Sean E.
AU - Zolotavin, Pavlo
AU - Guyot-Sionnest, Philippe
PY - 2012
DA - 2012/10/02 00:00:00
PB - Wiley
SP - 137-141
IS - 1
VL - 25
SN - 0935-9648
SN - 1521-4095
ER -
BibTex |
Cite this
BibTex Copy
@article{2012_Lhuillier,
author = {Emmanuel Lhuillier and Sean E. Keuleyan and Pavlo Zolotavin and Philippe Guyot-Sionnest},
title = {Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors},
journal = {Advanced Materials},
year = {2012},
volume = {25},
publisher = {Wiley},
month = {oct},
url = {https://doi.org/10.1002/adma.201203012},
number = {1},
pages = {137--141},
doi = {10.1002/adma.201203012}
}
MLA
Cite this
MLA Copy
Lhuillier, Emmanuel, et al. “Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors.” Advanced Materials, vol. 25, no. 1, Oct. 2012, pp. 137-141. https://doi.org/10.1002/adma.201203012.
Found error?