Advanced Materials, volume 25, issue 1, pages 137-141

Mid-Infrared HgTe/As₂S₃Field Effect Transistors and Photodetectors

Emmanuel Lhuillier ¹

Sean E. Keuleyan ²

Pavlo Zolotavin ²

Philippe Guyot-Sionnest ²

Hide authors affiliations Show authors affiliations: 2 affiliations

James Franck Institute, The University of Chicago, IL 60637 USA |

James Franck Institute, 929 E. 57th Street, The University of Chicago, Chicago, IL 60637, USA |

Publication type: Journal Article

Publication date: 2012-10-02

Wiley

Journal: Advanced Materials

SJR: 9.191

CiteScore: 43.0

Impact factor: 27.4

ISSN: 09359648, 15214095

DOI: 10.1002/adma.201203012

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General Materials Science

Mechanical Engineering

Mechanics of Materials

Abstract

HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.

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Cite this

GOST |

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GOST Copy

Lhuillier E. et al. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.

GOST all authors (up to 50) Copy

Lhuillier E., Keuleyan S. E., Zolotavin P., Guyot-Sionnest P. Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors // Advanced Materials. 2012. Vol. 25. No. 1. pp. 137-141.

RIS |

Cite this

RIS Copy

TY - JOUR

DO - 10.1002/adma.201203012

UR - https://doi.org/10.1002/adma.201203012

TI - Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors

T2 - Advanced Materials

AU - Lhuillier, Emmanuel

AU - Keuleyan, Sean E.

AU - Zolotavin, Pavlo

AU - Guyot-Sionnest, Philippe

PY - 2012

DA - 2012/10/02

PB - Wiley

SP - 137-141

IS - 1

VL - 25

SN - 0935-9648

SN - 1521-4095

ER -

BibTex |

Cite this

BibTex (up to 50 authors) Copy

@article{2012_Lhuillier,

author = {Emmanuel Lhuillier and Sean E. Keuleyan and Pavlo Zolotavin and Philippe Guyot-Sionnest},

title = {Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors},

journal = {Advanced Materials},

year = {2012},

volume = {25},

publisher = {Wiley},

month = {oct},

url = {https://doi.org/10.1002/adma.201203012},

number = {1},

pages = {137--141},

doi = {10.1002/adma.201203012}

}

MLA

Cite this

MLA Copy

Lhuillier, Emmanuel, et al. “Mid-Infrared HgTe/As2S3Field Effect Transistors and Photodetectors.” Advanced Materials, vol. 25, no. 1, Oct. 2012, pp. 137-141. https://doi.org/10.1002/adma.201203012.

Found error?

Publisher

Wiley

Journal

Advanced Materials

SJR

9.191

CiteScore

43.0

Impact factor

27.4

ISSN

09359648 (Print)

15214095 (Electronic)