Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation
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Nanoscale Bioelectric Characterization Group Institute for Bioengineering of Catalunya Baldiri i Reixac 15‐21 Barcelona 08028 Spain
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Center for Nano Science and Technology Instituto Italiano di Tecnologia Via Pascoli, 70/3 Milano 20133 Italy
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Publication type: Journal Article
Publication date: 2023-02-22
scimago Q1
wos Q2
SJR: 0.612
CiteScore: 5.3
Impact factor: 2.9
ISSN: 25130390
Multidisciplinary
Statistics and Probability
Numerical Analysis
Modeling and Simulation
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
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Citations from 2024:
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Huetter L. et al. Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation // Advanced Theory and Simulations. 2023. Vol. 6. No. 5. p. 2200696.
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Huetter L., Kyndiah A., Gomila G. Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation // Advanced Theory and Simulations. 2023. Vol. 6. No. 5. p. 2200696.
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TY - JOUR
DO - 10.1002/adts.202200696
UR - https://doi.org/10.1002/adts.202200696
TI - Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation
T2 - Advanced Theory and Simulations
AU - Huetter, Larissa
AU - Kyndiah, Adrica
AU - Gomila, Gabriel
PY - 2023
DA - 2023/02/22
PB - Wiley
SP - 2200696
IS - 5
VL - 6
SN - 2513-0390
ER -
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BibTex (up to 50 authors)
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@article{2023_Huetter,
author = {Larissa Huetter and Adrica Kyndiah and Gabriel Gomila},
title = {Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation},
journal = {Advanced Theory and Simulations},
year = {2023},
volume = {6},
publisher = {Wiley},
month = {feb},
url = {https://doi.org/10.1002/adts.202200696},
number = {5},
pages = {2200696},
doi = {10.1002/adts.202200696}
}
Cite this
MLA
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Huetter, Larissa, et al. “Analytical Physical Model for Electrolyte Gated Organic Field Effect Transistors in the Helmholtz Approximation.” Advanced Theory and Simulations, vol. 6, no. 5, Feb. 2023, p. 2200696. https://doi.org/10.1002/adts.202200696.