Open Access
OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers
Lyubov A Frolova
1
,
Alisa A Rezvanova
1
,
Valerii Z Shirinian
2
,
Andrey G Lvov
2
,
Alexander V Kulikov
1
,
Mikhail M. Krayushkin
2
,
Publication type: Journal Article
Publication date: 2015-12-20
scimago Q1
wos Q1
SJR: 1.478
CiteScore: 10.7
Impact factor: 5.3
ISSN: 2199160X
Electronic, Optical and Magnetic Materials
Abstract
Dr. L. A. Frolova, A. A. Rezvanova, Dr. A. V. Kulikov, Dr. P. A. Troshin Institute for Problems of Chemical Physics of Russian Academy of Sciences Semenov Prospect 1 , Chernogolovka Moscow region 142432 , Russian Federation E-mail: troshin2003@inbox.ru; troshin@icp.ac.ru Dr. V. Z. Shirinian, Dr. A. G. Lvov, Prof. M. M. Krayushkin N. D. Zelinskiy Institute of Organic Chemistry Russian Academy of Sciences Moscow 119991 , Russian Federation
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30
Total citations:
30
Citations from 2025:
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GOST
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Frolova L. A. et al. OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers // Advanced Electronic Materials. 2015. Vol. 2. No. 3. p. 1500219.
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Frolova L. A., Rezvanova A. A., Shirinian V. Z., Lvov A. G., Kulikov A. V., Krayushkin M. M., Troshin P. A. OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers // Advanced Electronic Materials. 2015. Vol. 2. No. 3. p. 1500219.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1002/aelm.201500219
UR - https://doi.org/10.1002/aelm.201500219
TI - OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers
T2 - Advanced Electronic Materials
AU - Frolova, Lyubov A
AU - Rezvanova, Alisa A
AU - Shirinian, Valerii Z
AU - Lvov, Andrey G
AU - Kulikov, Alexander V
AU - Krayushkin, Mikhail M.
AU - Troshin, Pavel A.
PY - 2015
DA - 2015/12/20
PB - Wiley
SP - 1500219
IS - 3
VL - 2
SN - 2199-160X
ER -
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BibTex (up to 50 authors)
Copy
@article{2015_Frolova,
author = {Lyubov A Frolova and Alisa A Rezvanova and Valerii Z Shirinian and Andrey G Lvov and Alexander V Kulikov and Mikhail M. Krayushkin and Pavel A. Troshin},
title = {OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers},
journal = {Advanced Electronic Materials},
year = {2015},
volume = {2},
publisher = {Wiley},
month = {dec},
url = {https://doi.org/10.1002/aelm.201500219},
number = {3},
pages = {1500219},
doi = {10.1002/aelm.201500219}
}
Cite this
MLA
Copy
Frolova, Lyubov A., et al. “OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers.” Advanced Electronic Materials, vol. 2, no. 3, Dec. 2015, p. 1500219. https://doi.org/10.1002/aelm.201500219.
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