Open Access
Advanced Electronic Materials, volume 4, issue 3, pages 1700580
PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance
Publication type: Journal Article
Publication date: 2018-02-01
Journal:
Advanced Electronic Materials
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 6.2
ISSN: 2199160X, 2199160X
Electronic, Optical and Magnetic Materials
Abstract
Lead chalcogenides with large exciton Bohr radius display strong quantum confinement, which make them applicable in a wide range of optoelectronic devices such as solar cells and photodetectors. Especially, 1D PbSe nanocrystals attract much attention with their potential for multiple exciton generation. However, very little is known on their charge transport properties. In this study well performing field-effect transistors based on PbSe nanorods with an inorganic iodide-based ligand are presented for the first time. The transistors at room temperature display ambipolar characteristics with electron mobility of approximate to 0.1 cm(2) V-1 s(-1) and hole mobility of 1.1 x 10(-4) cm(2) V-1 s(-1) in the ultraclean environment. Low temperature investigation reveals a transition around 200 K between nearest-neighbor and variable-range hopping mechanism. Below 200 K, the transport properties are dominated by the severe disorder.
Top-30
Citations by journals
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Nanomaterials
1 publication, 6.67%
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Journal of Inorganic and Organometallic Polymers and Materials
1 publication, 6.67%
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Nature Communications
1 publication, 6.67%
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Current Microbiology
1 publication, 6.67%
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Nanotechnology
1 publication, 6.67%
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Solar RRL
1 publication, 6.67%
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Advanced Functional Materials
1 publication, 6.67%
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Advanced Materials Interfaces
1 publication, 6.67%
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ACS Nano
1 publication, 6.67%
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ACS Applied Nano Materials
1 publication, 6.67%
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ACS Applied Electronic Materials
1 publication, 6.67%
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ACS Energy Letters
1 publication, 6.67%
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Dalton Transactions
1 publication, 6.67%
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Thin Solid Films
1 publication, 6.67%
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Russian Chemical Reviews
1 publication, 6.67%
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1
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Citations by publishers
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1
2
3
4
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American Chemical Society (ACS)
4 publications, 26.67%
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Springer Nature
3 publications, 20%
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Wiley
3 publications, 20%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 6.67%
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IOP Publishing
1 publication, 6.67%
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Royal Society of Chemistry (RSC)
1 publication, 6.67%
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Elsevier
1 publication, 6.67%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 6.67%
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Han L. et al. PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance // Advanced Electronic Materials. 2018. Vol. 4. No. 3. p. 1700580.
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Han L., Balazs D. M., Shulga A. G., Abdu Aguye M., MA W., Loi M. A. PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance // Advanced Electronic Materials. 2018. Vol. 4. No. 3. p. 1700580.
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TY - JOUR
DO - 10.1002/aelm.201700580
UR - https://doi.org/10.1002/aelm.201700580
TI - PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance
T2 - Advanced Electronic Materials
AU - Han, Lu
AU - Balazs, Daniel M
AU - Loi, Maria Antonietta
AU - Shulga, Artem G
AU - Abdu Aguye, Mustapha
AU - MA, WANLI
PY - 2018
DA - 2018/02/01 00:00:00
PB - Wiley
SP - 1700580
IS - 3
VL - 4
SN - 2199-160X
SN - 2199-160X
ER -
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@article{2018_Han,
author = {Lu Han and Daniel M Balazs and Maria Antonietta Loi and Artem G Shulga and Mustapha Abdu Aguye and WANLI MA},
title = {PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance},
journal = {Advanced Electronic Materials},
year = {2018},
volume = {4},
publisher = {Wiley},
month = {feb},
url = {https://doi.org/10.1002/aelm.201700580},
number = {3},
pages = {1700580},
doi = {10.1002/aelm.201700580}
}
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Han, Lu, et al. “PbSe Nanorod Field-Effect Transistors: Room- and Low-Temperature Performance.” Advanced Electronic Materials, vol. 4, no. 3, Feb. 2018, p. 1700580. https://doi.org/10.1002/aelm.201700580.