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Advanced Electronic Materials, volume 7, issue 1, pages 2000593

Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices

Publication typeJournal Article
Publication date2020-11-30
Q1
Q1
SJR1.689
CiteScore11.0
Impact factor5.3
ISSN2199160X
Electronic, Optical and Magnetic Materials

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GOST |
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GOST Copy
An H. et al. Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices // Advanced Electronic Materials. 2020. Vol. 7. No. 1. p. 2000593.
GOST all authors (up to 50) Copy
An H., GE Y., Li M., Kim T. W. Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices // Advanced Electronic Materials. 2020. Vol. 7. No. 1. p. 2000593.
RIS |
Cite this
RIS Copy
TY - JOUR
DO - 10.1002/aelm.202000593
UR - https://doi.org/10.1002/aelm.202000593
TI - Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices
T2 - Advanced Electronic Materials
AU - An, Haoqun
AU - GE, YANG
AU - Li, Mingjun
AU - Kim, Tae Whan
PY - 2020
DA - 2020/11/30
PB - Wiley
SP - 2000593
IS - 1
VL - 7
SN - 2199-160X
ER -
BibTex |
Cite this
BibTex (up to 50 authors) Copy
@article{2020_An,
author = {Haoqun An and YANG GE and Mingjun Li and Tae Whan Kim},
title = {Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices},
journal = {Advanced Electronic Materials},
year = {2020},
volume = {7},
publisher = {Wiley},
month = {nov},
url = {https://doi.org/10.1002/aelm.202000593},
number = {1},
pages = {2000593},
doi = {10.1002/aelm.202000593}
}
MLA
Cite this
MLA Copy
An, Haoqun, et al. “Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices.” Advanced Electronic Materials, vol. 7, no. 1, Nov. 2020, p. 2000593. https://doi.org/10.1002/aelm.202000593.
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