Open Access
Advanced Electronic Materials, volume 7, issue 1, pages 2000593
Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices
Publication type: Journal Article
Publication date: 2020-11-30
Journal:
Advanced Electronic Materials
Quartile SCImago
Q1
Quartile WOS
Q1
Impact factor: 6.2
ISSN: 2199160X, 2199160X
Electronic, Optical and Magnetic Materials
Top-30
Citations by journals
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1
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Multifunctional Materials
1 publication, 9.09%
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Organic Electronics
1 publication, 9.09%
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Small
1 publication, 9.09%
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ACS applied materials & interfaces
1 publication, 9.09%
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Scientific Reports
1 publication, 9.09%
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IEEE Transactions on Electron Devices
1 publication, 9.09%
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ACS Applied Electronic Materials
1 publication, 9.09%
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Engineering Reports
1 publication, 9.09%
|
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Polymers
1 publication, 9.09%
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|
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E3S Web of Conferences
1 publication, 9.09%
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Russian Chemical Reviews
1 publication, 9.09%
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1
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Citations by publishers
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1
2
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Wiley
2 publications, 18.18%
|
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American Chemical Society (ACS)
2 publications, 18.18%
|
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IOP Publishing
1 publication, 9.09%
|
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Elsevier
1 publication, 9.09%
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Springer Nature
1 publication, 9.09%
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IEEE
1 publication, 9.09%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 9.09%
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EDP Sciences
1 publication, 9.09%
|
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 9.09%
|
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1
2
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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An H. et al. Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices // Advanced Electronic Materials. 2020. Vol. 7. No. 1. p. 2000593.
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An H., GE Y., Li M., Kim T. W. Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices // Advanced Electronic Materials. 2020. Vol. 7. No. 1. p. 2000593.
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TY - JOUR
DO - 10.1002/aelm.202000593
UR - https://doi.org/10.1002/aelm.202000593
TI - Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices
T2 - Advanced Electronic Materials
AU - An, Haoqun
AU - GE, YANG
AU - Li, Mingjun
AU - Kim, Tae Whan
PY - 2020
DA - 2020/11/30 00:00:00
PB - Wiley
SP - 2000593
IS - 1
VL - 7
SN - 2199-160X
SN - 2199-160X
ER -
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@article{2020_An,
author = {Haoqun An and YANG GE and Mingjun Li and Tae Whan Kim},
title = {Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices},
journal = {Advanced Electronic Materials},
year = {2020},
volume = {7},
publisher = {Wiley},
month = {nov},
url = {https://doi.org/10.1002/aelm.202000593},
number = {1},
pages = {2000593},
doi = {10.1002/aelm.202000593}
}
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MLA
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An, Haoqun, et al. “Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices.” Advanced Electronic Materials, vol. 7, no. 1, Nov. 2020, p. 2000593. https://doi.org/10.1002/aelm.202000593.