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pages 2200786
Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region
Publication type: Journal Article
Publication date: 2022-12-08
scimago Q1
wos Q1
SJR: 1.478
CiteScore: 10.7
Impact factor: 5.3
ISSN: 2199160X
Electronic, Optical and Magnetic Materials
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Metrics
32
Total citations:
32
Citations from 2025:
15
(46.88%)
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Zhou Y., Wang X., Dodabalapur A. Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region // Advanced Electronic Materials. 2022. p. 2200786.
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Zhou Y., Wang X., Dodabalapur A. Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region // Advanced Electronic Materials. 2022. p. 2200786.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1002/aelm.202200786
UR - https://doi.org/10.1002/aelm.202200786
TI - Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region
T2 - Advanced Electronic Materials
AU - Zhou, Yuchen
AU - Wang, Xiao
AU - Dodabalapur, Ananth
PY - 2022
DA - 2022/12/08
PB - Wiley
SP - 2200786
SN - 2199-160X
ER -
Cite this
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@article{2022_Zhou,
author = {Yuchen Zhou and Xiao Wang and Ananth Dodabalapur},
title = {Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region},
journal = {Advanced Electronic Materials},
year = {2022},
publisher = {Wiley},
month = {dec},
url = {https://doi.org/10.1002/aelm.202200786},
pages = {2200786},
doi = {10.1002/aelm.202200786}
}