Angewandte Chemie - International Edition

, том 51 , издание 21 , страницы 5138-5142

Generation of a porous luminescent structure through ultrasonically induced pathways of silicon modification

Тип публикации: Journal Article

Дата публикации: 2012-04-05

Wiley

Angewandte Chemie - International Edition

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SJR: 5.55

CiteScore: 27.6

Impact factor: 16.9

ISSN: 14337851, 15213773

DOI: 10.1002/anie.201105084

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PubMed ID: 22489066

General Chemistry

Catalysis

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Porous silicon with unique optical properties was formed through an ultrasonication method. This technique allows the one-step formation of silicon with a purposefully variable porous structure, provides for the possibility of patterned surface-selective modification, and forms photoluminescent centers and defect states, which can act as centers for charge separation.

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Skorb E. V., Andreeva D., Möhwald H. Generation of a porous luminescent structure through ultrasonically induced pathways of silicon modification // Angewandte Chemie - International Edition. 2012. Vol. 51. No. 21. pp. 5138-5142.

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TY - JOUR

DO - 10.1002/anie.201105084

UR - https://doi.org/10.1002/anie.201105084

TI - Generation of a porous luminescent structure through ultrasonically induced pathways of silicon modification

T2 - Angewandte Chemie - International Edition

AU - Skorb, Ekaterina V.

AU - Andreeva, D.V.

AU - Möhwald, Helmuth

PY - 2012

DA - 2012/04/05

PB - Wiley

SP - 5138-5142

IS - 21

VL - 51

PMID - 22489066

SN - 1433-7851

SN - 1521-3773

ER -

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@article{2012_Skorb,

author = {Ekaterina V. Skorb and D.V. Andreeva and Helmuth Möhwald},

title = {Generation of a porous luminescent structure through ultrasonically induced pathways of silicon modification},

journal = {Angewandte Chemie - International Edition},

year = {2012},

volume = {51},

publisher = {Wiley},

month = {apr},

url = {https://doi.org/10.1002/anie.201105084},

number = {21},

pages = {5138--5142},

doi = {10.1002/anie.201105084}

}

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Skorb, Ekaterina V., et al. “Generation of a porous luminescent structure through ultrasonically induced pathways of silicon modification.” Angewandte Chemie - International Edition, vol. 51, no. 21, Apr. 2012, pp. 5138-5142. https://doi.org/10.1002/anie.201105084.