Open Access
High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative
Wei Vanessa Wang
1
,
Yamin Zhang
1
,
Xiang-Yang Li
1
,
Zi‐Zhen Chen
1
,
ZE-HUA WU
1
,
Lei Zhang
1
,
Ze-Wei Lin
1
,
Hao Li Zhang
1, 2
Publication type: Journal Article
Publication date: 2021-04-02
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Metrics
36
Total citations:
36
Citations from 2025:
5
(13.89%)
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Wang W. V. et al. High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative // InfoMat. 2021. Vol. 3. No. 7. pp. 814-822.
GOST all authors (up to 50)
Copy
Wang W. V., Zhang Y., Li X., Chen Z., WU Z., Zhang L., Lin Z., Zhang H. L. High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative // InfoMat. 2021. Vol. 3. No. 7. pp. 814-822.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1002/inf2.12186
UR - https://doi.org/10.1002/inf2.12186
TI - High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative
T2 - InfoMat
AU - Wang, Wei Vanessa
AU - Zhang, Yamin
AU - Li, Xiang-Yang
AU - Chen, Zi‐Zhen
AU - WU, ZE-HUA
AU - Zhang, Lei
AU - Lin, Ze-Wei
AU - Zhang, Hao Li
PY - 2021
DA - 2021/04/02
PB - Wiley
SP - 814-822
IS - 7
VL - 3
SN - 2567-3165
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2021_Wang,
author = {Wei Vanessa Wang and Yamin Zhang and Xiang-Yang Li and Zi‐Zhen Chen and ZE-HUA WU and Lei Zhang and Ze-Wei Lin and Hao Li Zhang},
title = {High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative},
journal = {InfoMat},
year = {2021},
volume = {3},
publisher = {Wiley},
month = {apr},
url = {https://doi.org/10.1002/inf2.12186},
number = {7},
pages = {814--822},
doi = {10.1002/inf2.12186}
}
Cite this
MLA
Copy
Wang, Wei Vanessa, et al. “High performance nonvolatile organic field‐effect transistor memory devices based on pyrene diimide derivative.” InfoMat, vol. 3, no. 7, Apr. 2021, pp. 814-822. https://doi.org/10.1002/inf2.12186.