Lasing Characteristics of GaInAsP Laser Diodes on Directly Bonded InP/Si Substrates with a Gas out Channel

In this study, the lasing characteristics of GaInAsP laser diodes (LDs) grown on directly bonded InP/Si substrates with a gas out channel (GOC) structure are investigated. GOC InP/Si substrates are fabricated using hydrophilic direct bonding and metal–organic vapor phase epitaxy growth methods and subsequently their surface conditions, bonding strength, and lasing performance are examined. Herein, it is observed that the introduction of a GOC substantially reduces void formation and improves the threshold current density of the LDs. In the results, it is demonstrated that the performance of the GOC InP/Si substrates is comparable to that of InP substrates, highlighting their potential for use in high‐performance optical devices.