Annealing Sequence Dependence of Directly Bonded InP/Si Substrate for GaInAsP Laser Diodes on a Silicon Platform

This study investigates the effects of different annealing sequences on the hydrophilic bonding of InP/Si substrates for GaInAsP laser diodes (LDs). Several annealing profiles are explored, including a process with slow temperature ramping over a specific range to minimize void formation, and compared to the traditional 8‐hour annealing process, which uses a constant annealing rate. The slow ramping approach within a targeted temperature range is found to be more effective in reducing void formation and improving bonding quality. GaInAsP lasers grown on substrates annealed using this method demonstrate improved performance, showing the potential for optimized annealing processes to enhance the quality and efficiency of bonded LDs.