Thermal effects in Ge-Sb-Te phase-change memory materials during multiple thermal cycling
Phase transformations in (GeTe)m(Sb2Te3)n (m: n = 1:1; 1:2; 2:1) alloys and thin films on their basis were studied during thermal cycling by differential scanning calorimetry, and some thermal properties were determined. Exothermal peaks due to the amorphous → crystalline phase changes were observed in all thin films. In addition, reproducible endothermic peak in the range of 390‐415 °C was revealed in thin films as well as in bulk Ge2Sb2Te5, GeSb2Te4, GeSb4Te7 samples, which may influence on the kinetics and endurance of data reading processes in phase‐change memory devices. Activation energies of observed heat effects were estimated with using Kissinger's method, and nature of the given endothermic peak was discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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