Single GaN Nanowires for Extremely High Current Commutation
A. M. Mozharov
1
,
Ivan S. Mukhin
1, 3
Publication type: Journal Article
Publication date: 2021-02-05
scimago Q2
wos Q3
SJR: 0.609
CiteScore: 5.1
Impact factor: 2.0
ISSN: 18626254, 18626270
Condensed Matter Physics
General Materials Science
Abstract
An array of GaN nanowires (NWs) on Si substrate is synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single NWs transferred to an auxiliary substrate demonstrate that the current density reaches an extremely high level of 2 MA cm−2 without NW damage. Taking into account the limited conductivity of the NW periphery due to electron surface states, that is, the conduction channel narrowing, the effective current density can reach 3 MA cm−2.
Found
Nothing found, try to update filter.
Found
Nothing found, try to update filter.
Top-30
Journals
|
1
|
|
|
Journal of Physical Chemistry Letters
1 publication, 25%
|
|
|
Physica Status Solidi - Rapid Research Letters
1 publication, 25%
|
|
|
Nanotechnology
1 publication, 25%
|
|
|
Journal of Manufacturing and Materials Processing
1 publication, 25%
|
|
|
1
|
Publishers
|
1
|
|
|
American Chemical Society (ACS)
1 publication, 25%
|
|
|
Wiley
1 publication, 25%
|
|
|
IOP Publishing
1 publication, 25%
|
|
|
MDPI
1 publication, 25%
|
|
|
1
|
- We do not take into account publications without a DOI.
- Statistics recalculated weekly.
Are you a researcher?
Create a profile to get free access to personal recommendations for colleagues and new articles.
Metrics
4
Total citations:
4
Citations from 2024:
1
(25%)
Cite this
GOST |
RIS |
BibTex |
MLA
Cite this
GOST
Copy
Shugurov K. et al. Single GaN Nanowires for Extremely High Current Commutation // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 15. No. 4. p. 2000590.
GOST all authors (up to 50)
Copy
Shugurov K., Mozharov A. M., Sapunov G. A., Fedorov V. V., Tchernycheva M., Mukhin I. S. Single GaN Nanowires for Extremely High Current Commutation // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 15. No. 4. p. 2000590.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1002/pssr.202000590
UR - https://doi.org/10.1002/pssr.202000590
TI - Single GaN Nanowires for Extremely High Current Commutation
T2 - Physica Status Solidi - Rapid Research Letters
AU - Shugurov, Konstantin
AU - Mozharov, A. M.
AU - Sapunov, Georgiy A
AU - Fedorov, Vladimir V
AU - Tchernycheva, Maria
AU - Mukhin, Ivan S.
PY - 2021
DA - 2021/02/05
PB - Wiley
SP - 2000590
IS - 4
VL - 15
SN - 1862-6254
SN - 1862-6270
ER -
Cite this
BibTex (up to 50 authors)
Copy
@article{2021_Shugurov,
author = {Konstantin Shugurov and A. M. Mozharov and Georgiy A Sapunov and Vladimir V Fedorov and Maria Tchernycheva and Ivan S. Mukhin},
title = {Single GaN Nanowires for Extremely High Current Commutation},
journal = {Physica Status Solidi - Rapid Research Letters},
year = {2021},
volume = {15},
publisher = {Wiley},
month = {feb},
url = {https://doi.org/10.1002/pssr.202000590},
number = {4},
pages = {2000590},
doi = {10.1002/pssr.202000590}
}
Cite this
MLA
Copy
Shugurov, Konstantin, et al. “Single GaN Nanowires for Extremely High Current Commutation.” Physica Status Solidi - Rapid Research Letters, vol. 15, no. 4, Feb. 2021, p. 2000590. https://doi.org/10.1002/pssr.202000590.