Physica Status Solidi - Rapid Research Letters, volume 15, issue 4, pages 2000590

Single GaN Nanowires for Extremely High Current Commutation

Publication typeJournal Article
Publication date2021-02-05
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor2.8
ISSN18626254, 18626270
Condensed Matter Physics
General Materials Science
Abstract

An array of GaN nanowires (NWs) on Si substrate is synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single NWs transferred to an auxiliary substrate demonstrate that the current density reaches an extremely high level of 2 MA cm−2 without NW damage. Taking into account the limited conductivity of the NW periphery due to electron surface states, that is, the conduction channel narrowing, the effective current density can reach 3 MA cm−2.

Citations by journals

1
Journal of Physical Chemistry Letters
Journal of Physical Chemistry Letters, 1, 33.33%
Journal of Physical Chemistry Letters
1 publication, 33.33%
Physica Status Solidi - Rapid Research Letters
Physica Status Solidi - Rapid Research Letters, 1, 33.33%
Physica Status Solidi - Rapid Research Letters
1 publication, 33.33%
Nanotechnology
Nanotechnology, 1, 33.33%
Nanotechnology
1 publication, 33.33%
1

Citations by publishers

1
American Chemical Society (ACS)
American Chemical Society (ACS), 1, 33.33%
American Chemical Society (ACS)
1 publication, 33.33%
Wiley
Wiley, 1, 33.33%
Wiley
1 publication, 33.33%
IOP Publishing
IOP Publishing, 1, 33.33%
IOP Publishing
1 publication, 33.33%
1
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Shugurov K. et al. Single GaN Nanowires for Extremely High Current Commutation // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 15. No. 4. p. 2000590.
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Shugurov K., Mozharov A. M., Sapunov G. A., Fedorov V. V., Tchernycheva M., Mukhin I. S. Single GaN Nanowires for Extremely High Current Commutation // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 15. No. 4. p. 2000590.
RIS |
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RIS Copy
TY - JOUR
DO - 10.1002/pssr.202000590
UR - https://doi.org/10.1002%2Fpssr.202000590
TI - Single GaN Nanowires for Extremely High Current Commutation
T2 - Physica Status Solidi - Rapid Research Letters
AU - Shugurov, Konstantin
AU - Mozharov, A. M.
AU - Sapunov, Georgiy A
AU - Fedorov, Vladimir V
AU - Tchernycheva, Maria
AU - Mukhin, Ivan S.
PY - 2021
DA - 2021/02/05 00:00:00
PB - Wiley
SP - 2000590
IS - 4
VL - 15
SN - 1862-6254
SN - 1862-6270
ER -
BibTex |
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BibTex Copy
@article{2021_Shugurov
author = {Konstantin Shugurov and A. M. Mozharov and Georgiy A Sapunov and Vladimir V Fedorov and Maria Tchernycheva and Ivan S. Mukhin},
title = {Single GaN Nanowires for Extremely High Current Commutation},
journal = {Physica Status Solidi - Rapid Research Letters},
year = {2021},
volume = {15},
publisher = {Wiley},
month = {feb},
url = {https://doi.org/10.1002%2Fpssr.202000590},
number = {4},
pages = {2000590},
doi = {10.1002/pssr.202000590}
}
MLA
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MLA Copy
Shugurov, Konstantin, et al. “Single GaN Nanowires for Extremely High Current Commutation.” Physica Status Solidi - Rapid Research Letters, vol. 15, no. 4, Feb. 2021, p. 2000590. https://doi.org/10.1002%2Fpssr.202000590.
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