Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance
Nikita V Prudnikov
1, 2
,
Yulia Malakhova
1, 3
,
Andrey Emelyanov
1, 2
,
Svetlana M. Peregudova
5
,
Valeria M Barteneva
3
,
Vyacheslav Demin
1
,
Lev A. Feigin
1
,
S. N. Chvalun
1
,
Victor V. Erokhin
1, 6
6
CNR-IMEM (Italian National Research CouncilInstitute of Materials for Electronics and Magnetism) 37/A Parco Area delle Scienze Parma 43124 Italy
|
Publication type: Journal Article
Publication date: 2021-12-01
scimago Q2
wos Q3
SJR: 0.609
CiteScore: 5.1
Impact factor: 2.0
ISSN: 18626254, 18626270
Condensed Matter Physics
General Materials Science
Abstract
Organic memristive devices are promising elements to be used in memory tasks, neuromorphic systems, and bioelectronics as hardware analogs of synapses. Among other materials, small molecules are considered in this field as candidates with more adjustable properties and fine chemical structures. Herein, the first organic memristive device based on benzothieno[3,2‐b][1]‐benzothiophene (BTBT) siloxane dimer is reported. The device resistance programming by voltage pulses with various control parameters is demonstrated: amplitude, frequency, and pulse duty cycle. It is proved that the device has at least four different resistive states in each case. In addition, the device shows 2.5 × 104 cycles of sustainable operation in the endurance test with ROFF/RON ratio exceeding 5.
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Total citations:
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Citations from 2024:
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(66.67%)
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Prudnikov N. V. et al. Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 16. No. 2. p. 2100471.
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Prudnikov N. V., Malakhova Y., Emelyanov A., Borshchev O. V., Skorotetcky M. S., Polinskaya M. S., Peregudova S. M., Barteneva V. M., Demin V., Feigin L. A., Chvalun S. N., Ponomarenko S. A., Erokhin V. V. Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance // Physica Status Solidi - Rapid Research Letters. 2021. Vol. 16. No. 2. p. 2100471.
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TY - JOUR
DO - 10.1002/pssr.202100471
UR - https://doi.org/10.1002/pssr.202100471
TI - Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance
T2 - Physica Status Solidi - Rapid Research Letters
AU - Prudnikov, Nikita V
AU - Malakhova, Yulia
AU - Emelyanov, Andrey
AU - Borshchev, Oleg V.
AU - Skorotetcky, Maxim S.
AU - Polinskaya, Marina S.
AU - Peregudova, Svetlana M.
AU - Barteneva, Valeria M
AU - Demin, Vyacheslav
AU - Feigin, Lev A.
AU - Chvalun, S. N.
AU - Ponomarenko, Sergey A.
AU - Erokhin, Victor V.
PY - 2021
DA - 2021/12/01
PB - Wiley
SP - 2100471
IS - 2
VL - 16
SN - 1862-6254
SN - 1862-6270
ER -
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BibTex (up to 50 authors)
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@article{2021_Prudnikov,
author = {Nikita V Prudnikov and Yulia Malakhova and Andrey Emelyanov and Oleg V. Borshchev and Maxim S. Skorotetcky and Marina S. Polinskaya and Svetlana M. Peregudova and Valeria M Barteneva and Vyacheslav Demin and Lev A. Feigin and S. N. Chvalun and Sergey A. Ponomarenko and Victor V. Erokhin},
title = {Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance},
journal = {Physica Status Solidi - Rapid Research Letters},
year = {2021},
volume = {16},
publisher = {Wiley},
month = {dec},
url = {https://doi.org/10.1002/pssr.202100471},
number = {2},
pages = {2100471},
doi = {10.1002/pssr.202100471}
}
Cite this
MLA
Copy
Prudnikov, Nikita V., et al. “Pulse Programming of Resistive States of a Benzothieno[3,2‐B][1]‐Benzothiophene‐Based Organic Memristive Device with High Endurance.” Physica Status Solidi - Rapid Research Letters, vol. 16, no. 2, Dec. 2021, p. 2100471. https://doi.org/10.1002/pssr.202100471.