Open Access
β-Ga2O3 material properties, growth technologies, and devices: a review
Publication type: Journal Article
Publication date: 2022-01-17
scimago Q1
wos Q1
SJR: 1.379
CiteScore: 11.5
Impact factor: 5.9
ISSN: 23094710
General Engineering
Abstract
Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.
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195
Total citations:
195
Citations from 2024:
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(72.68%)
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Higashiwaki M. β-Ga2O3 material properties, growth technologies, and devices: a review // AAPPS Bulletin. 2022. Vol. 32. No. 1. 3
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Higashiwaki M. β-Ga2O3 material properties, growth technologies, and devices: a review // AAPPS Bulletin. 2022. Vol. 32. No. 1. 3
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TY - JOUR
DO - 10.1007/s43673-021-00033-0
UR - https://doi.org/10.1007/s43673-021-00033-0
TI - β-Ga2O3 material properties, growth technologies, and devices: a review
T2 - AAPPS Bulletin
AU - Higashiwaki, Masataka
PY - 2022
DA - 2022/01/17
PB - Springer Nature
IS - 1
VL - 32
SN - 2309-4710
ER -
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@article{2022_Higashiwaki,
author = {Masataka Higashiwaki},
title = {β-Ga2O3 material properties, growth technologies, and devices: a review},
journal = {AAPPS Bulletin},
year = {2022},
volume = {32},
publisher = {Springer Nature},
month = {jan},
url = {https://doi.org/10.1007/s43673-021-00033-0},
number = {1},
pages = {3},
doi = {10.1007/s43673-021-00033-0}
}