Journal of Materials Science: Materials in Electronics, volume 34, issue 5, publication number 350
Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2
王慧琴 Wang Huiqin
1
,
Zixu Liu
1
,
Leiyuan Wang
1
,
Qiujie Shou
1
,
Ming Gao
2
,
Huijie Wang
2
,
Ahsan Nazir
2, 3
,
Pengwei Huo
2
1
School of Energy and Power Engineering, JiangSu University, Zhenjiang, People’s Republic of China
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Publication type: Journal Article
Publication date: 2023-02-04
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 2.8
ISSN: 09574522, 1573482X
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Interfacial coupling of two-dimensional semiconductor materials is an effective option to construct heterojunction for enhancing photocatalytic activity. In this paper, a g-C3N4/SnS2 type-II heterojunction was constructed using an electrostatic self-assembly method. The g-C3N4/SnS2-60 showed a CO yield of 2.54 µmol g−1, which was 2.96 and 22.1 times that of the g-C3N4 and SnS2 nanosheets, respectively. The efficient carrier separation efficiency of the composites is mainly derived from the type-II heterojunction structure and the interfacial synergy of the two-dimensional (2D) structure. In addition, the high light response intensity of the g-C3N4/SnS2 composite also had excellent electron excitation and transfer ability. This work provides a new vision for the rational design of 2D heterojunction-based photocatalysts for the study of CO2 reduction.
Top-30
Citations by journals
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Journal of Environmental Chemical Engineering
1 publication, 20%
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Progress in Materials Science
1 publication, 20%
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Applied Surface Science
1 publication, 20%
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Inorganic Chemistry Communication
1 publication, 20%
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Russian Chemical Reviews
1 publication, 20%
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Citations by publishers
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4
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Elsevier
4 publications, 80%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 20%
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- We do not take into account publications without a DOI.
- Statistics recalculated only for publications connected to researchers, organizations and labs registered on the platform.
- Statistics recalculated weekly.
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Wang Huiqin 王. et al. Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2 // Journal of Materials Science: Materials in Electronics. 2023. Vol. 34. No. 5. 350
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Wang Huiqin 王., Liu Z., Wang L., Shou Q., Gao M., Wang H., Nazir A., Huo P. Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2 // Journal of Materials Science: Materials in Electronics. 2023. Vol. 34. No. 5. 350
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TY - JOUR
DO - 10.1007/s10854-022-09642-3
UR - https://doi.org/10.1007/s10854-022-09642-3
TI - Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2
T2 - Journal of Materials Science: Materials in Electronics
AU - Wang Huiqin, 王慧琴
AU - Liu, Zixu
AU - Wang, Leiyuan
AU - Shou, Qiujie
AU - Gao, Ming
AU - Wang, Huijie
AU - Nazir, Ahsan
AU - Huo, Pengwei
PY - 2023
DA - 2023/02/04 00:00:00
PB - Springer Nature
IS - 5
VL - 34
SN - 0957-4522
SN - 1573-482X
ER -
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@article{2023_Wang Huiqin,
author = {王慧琴 Wang Huiqin and Zixu Liu and Leiyuan Wang and Qiujie Shou and Ming Gao and Huijie Wang and Ahsan Nazir and Pengwei Huo},
title = {Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2},
journal = {Journal of Materials Science: Materials in Electronics},
year = {2023},
volume = {34},
publisher = {Springer Nature},
month = {feb},
url = {https://doi.org/10.1007/s10854-022-09642-3},
number = {5},
doi = {10.1007/s10854-022-09642-3}
}