Journal of Materials Science: Materials in Electronics

, том 34 , издание 5 , номер публикации 350

Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2

Тип публикации: Journal Article

Дата публикации: 2023-02-04

Springer Nature

Journal of Materials Science: Materials in Electronics

SCImago Q2

WOS Q2

БС1

SJR: 0.493

CiteScore: 5.1

Impact factor: 3.2

ISSN: 09574522, 1573482X

DOI: 10.1007/s10854-022-09642-3

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Electronic, Optical and Magnetic Materials

Atomic and Molecular Physics, and Optics

Condensed Matter Physics

Electrical and Electronic Engineering

Краткое описание

Interfacial coupling of two-dimensional semiconductor materials is an effective option to construct heterojunction for enhancing photocatalytic activity. In this paper, a g-C3N4/SnS2 type-II heterojunction was constructed using an electrostatic self-assembly method. The g-C3N4/SnS2-60 showed a CO yield of 2.54 µmol g−1, which was 2.96 and 22.1 times that of the g-C3N4 and SnS2 nanosheets, respectively. The efficient carrier separation efficiency of the composites is mainly derived from the type-II heterojunction structure and the interfacial synergy of the two-dimensional (2D) structure. In addition, the high light response intensity of the g-C3N4/SnS2 composite also had excellent electron excitation and transfer ability. This work provides a new vision for the rational design of 2D heterojunction-based photocatalysts for the study of CO2 reduction.

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Wang Huiqin 王. et al. Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2 // Journal of Materials Science: Materials in Electronics. 2023. Vol. 34. No. 5. 350

ГОСТ со всеми авторами (до 50) Скопировать

Wang Huiqin 王., Liu Z., Wang L., Shou Q., Gao M., Wang H., Nazir A., Huo P. Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2 // Journal of Materials Science: Materials in Electronics. 2023. Vol. 34. No. 5. 350

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TY - JOUR

DO - 10.1007/s10854-022-09642-3

UR - https://doi.org/10.1007/s10854-022-09642-3

TI - Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2

T2 - Journal of Materials Science: Materials in Electronics

AU - Wang Huiqin, 王慧琴

AU - Liu, Zixu

AU - Wang, Leiyuan

AU - Shou, Qiujie

AU - Gao, Ming

AU - Wang, Huijie

AU - Nazir, Ahsan

AU - Huo, Pengwei

PY - 2023

DA - 2023/02/04

PB - Springer Nature

IS - 5

VL - 34

SN - 0957-4522

SN - 1573-482X

ER -

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BibTex (до 50 авторов) Скопировать

@article{2023_Wang Huiqin,

author = {王慧琴 Wang Huiqin and Zixu Liu and Leiyuan Wang and Qiujie Shou and Ming Gao and Huijie Wang and Ahsan Nazir and Pengwei Huo},

title = {Fabrication of g-C3N4/SnS2 type-II heterojunction for efficient photocatalytic conversion of CO2},

journal = {Journal of Materials Science: Materials in Electronics},

year = {2023},

volume = {34},

publisher = {Springer Nature},

month = {feb},

url = {https://doi.org/10.1007/s10854-022-09642-3},

number = {5},

pages = {350},

doi = {10.1007/s10854-022-09642-3}

}

Издатель

Springer Nature

Журнал

Journal of Materials Science: Materials in Electronics

SCImago Q2

WOS Q2

БС1

SJR

0.493

CiteScore

5.1

Impact factor

3.2

ISSN

09574522 (Print)

1573482X (Electronic)

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