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Applied Physics A: Materials Science and Processing

, том 122 , издание 4 , номер публикации 297

Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

Тип публикации: Journal Article

Дата публикации: 2016-03-07

Springer Nature

Applied Physics A: Materials Science and Processing

SCImago Q2

WOS Q2

БС2

SJR: 0.474

CiteScore: 5.2

Impact factor: 3

ISSN: 09478396, 14320630

DOI: 10.1007/s00339-016-9812-5

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General Chemistry

General Materials Science

Краткое описание

The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.

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ALYAMANI A. et al. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method // Applied Physics A: Materials Science and Processing. 2016. Vol. 122. No. 4. 297

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ALYAMANI A., Tataroğlu A., El Mir L., Al Ghamdi A. A., Dahman H., Farooq W. A., Yakuphanoglu F. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method // Applied Physics A: Materials Science and Processing. 2016. Vol. 122. No. 4. 297

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TY - JOUR

DO - 10.1007/s00339-016-9812-5

UR - https://doi.org/10.1007/s00339-016-9812-5

TI - Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

T2 - Applied Physics A: Materials Science and Processing

AU - ALYAMANI, A.

AU - Tataroğlu, A

AU - El Mir, L.

AU - Al Ghamdi, Ahmed A

AU - Dahman, H.

AU - Farooq, W. A.

AU - Yakuphanoglu, F.

PY - 2016

DA - 2016/03/07

PB - Springer Nature

IS - 4

VL - 122

SN - 0947-8396

SN - 1432-0630

ER -

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@article{2016_ALYAMANI,

author = {A. ALYAMANI and A Tataroğlu and L. El Mir and Ahmed A Al Ghamdi and H. Dahman and W. A. Farooq and F. Yakuphanoglu},

title = {Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method},

journal = {Applied Physics A: Materials Science and Processing},

year = {2016},

volume = {122},

publisher = {Springer Nature},

month = {mar},

url = {https://doi.org/10.1007/s00339-016-9812-5},

number = {4},

pages = {297},

doi = {10.1007/s00339-016-9812-5}

}

Издатель

Springer Nature

Журнал

Applied Physics A: Materials Science and Processing

SCImago Q2

WOS Q2

БС2

SJR

0.474

CiteScore

5.2

Impact factor

ISSN

09478396 (Print)

14320630 (Electronic)

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