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Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films
Тип публикации: Journal Article
Дата публикации: 2001-11-01
scimago Q2
wos Q2
БС2
SJR: 0.486
CiteScore: 4.9
Impact factor: 2.8
ISSN: 09478396, 14320630
General Chemistry
General Materials Science
Краткое описание
Amorphous/crystalline mixed La0.5Sr0.5MnO3 (LSMO) thin films on quartz wafers are prepared at different depositing temperatures using laser ablation and their low-field magnetoresistive property is investigated. It is argued that the insulating amorphous layers separating the magnetic microcrystalline grains may act as the barriers for electron tunneling. The rapid decay of magnetoresistance with increasing temperature is explained by the spin-polarized inter-grain tunneling. Given the spin-polarized inter-grain tunneling as the probable mechanism, it is believed that the spin flip during inter-grain tunneling reaches a minimum at the optimized depositing temperature of 600 °C and consequently the maximal low-field magnetoresistance is obtained.
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Liu J. et al. Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films // Applied Physics A: Materials Science and Processing. 2001. Vol. 73. No. 5. pp. 625-630.
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Liu J., Yuan G. L., Chen X. Y., Liu Z. G., DU Y. W., Huang Q., Li J., XU S. Y., Ong C. K. Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films // Applied Physics A: Materials Science and Processing. 2001. Vol. 73. No. 5. pp. 625-630.
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TY - JOUR
DO - 10.1007/s003390100823
UR - https://doi.org/10.1007/s003390100823
TI - Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films
T2 - Applied Physics A: Materials Science and Processing
AU - Liu, J-M
AU - Yuan, G. L.
AU - Chen, X. Y.
AU - Liu, Z. G.
AU - DU, Y. W.
AU - Huang, Q.
AU - Li, J.
AU - XU, S. Y.
AU - Ong, C. K.
PY - 2001
DA - 2001/11/01
PB - Springer Nature
SP - 625-630
IS - 5
VL - 73
SN - 0947-8396
SN - 1432-0630
ER -
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@article{2001_Liu,
author = {J-M Liu and G. L. Yuan and X. Y. Chen and Z. G. Liu and Y. W. DU and Q. Huang and J. Li and S. Y. XU and C. K. Ong},
title = {Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films},
journal = {Applied Physics A: Materials Science and Processing},
year = {2001},
volume = {73},
publisher = {Springer Nature},
month = {nov},
url = {https://doi.org/10.1007/s003390100823},
number = {5},
pages = {625--630},
doi = {10.1007/s003390100823}
}
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Liu, J-M, et al. “Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films.” Applied Physics A: Materials Science and Processing, vol. 73, no. 5, Nov. 2001, pp. 625-630. https://doi.org/10.1007/s003390100823.