Journal of Materials Science: Materials in Electronics, volume 29, issue 1, pages 546-557
Memristive, memcapacitive and meminductive behavior of single and co-doped cadmium selenide nanocomposites under different doping environment
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Department of Physics, Pandu College, Guwahati, India
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3
Department of Physics, Rajib Gandhi University, Itanagar, India
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Publication type: Journal Article
Publication date: 2017-10-12
Quartile SCImago
Q2
Quartile WOS
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Impact factor: 2.8
ISSN: 09574522, 1573482X
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Undoped and Mn/Cu/(Mn+Cu) doped CdSe colloidal quantum dots embedded in Starch matrix have been synthesized by adopting single-step chemical bath deposition method. X-ray diffraction (XRD) results show cubic zinc blende structures in both doped and undoped samples. The estimated particle sizes from the XRD are found to be in the range (6.9–10.3) nm. The HRTEM images exhibit irregular shaped nanoparticles with size in the range (6–10.2) nm. Thus, the particle sizes estimated from XRD results roughly agree with those from HRTEM measurements. The UV–Vis absorption spectra for both doped and undoped samples show blue shift, suggesting quantum confinement. All the undoped and doped samples show PL emission in the range 510–653 nm. PL intensity is found to increase due to doping. Two terminal electrochemical devices are fabricated with the as-prepared doped and undoped samples as the active layer with ITO coated glass slide and aluminum (Al) as electrodes. I–V characteristics of the as-fabricated devices exhibit pinched hysteresis loops having memristive, memcapacitive and meminductive nature. A new parameter is conceptualized which is found to be sensitive to doping material as well as doping concentration. Schottky emission mechanism is found to be dominant in both low resistance state and high resistance state. ON/OFF switching features favour Coulomb Blockade phenomenon.
Top-30
Citations by journals
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Journal of Electronic Materials
1 publication, 25%
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Applied Physics Letters
1 publication, 25%
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Russian Chemical Reviews
1 publication, 25%
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1
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Citations by publishers
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Springer Nature
1 publication, 25%
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American Institute of Physics (AIP)
1 publication, 25%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 25%
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DAS B. et al. Memristive, memcapacitive and meminductive behavior of single and co-doped cadmium selenide nanocomposites under different doping environment // Journal of Materials Science: Materials in Electronics. 2017. Vol. 29. No. 1. pp. 546-557.
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DAS B., Devi J., Kalita P. K., Datta P. Memristive, memcapacitive and meminductive behavior of single and co-doped cadmium selenide nanocomposites under different doping environment // Journal of Materials Science: Materials in Electronics. 2017. Vol. 29. No. 1. pp. 546-557.
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TY - JOUR
DO - 10.1007/s10854-017-7946-7
UR - https://doi.org/10.1007/s10854-017-7946-7
TI - Memristive, memcapacitive and meminductive behavior of single and co-doped cadmium selenide nanocomposites under different doping environment
T2 - Journal of Materials Science: Materials in Electronics
AU - DAS, BANDANA
AU - Devi, Jutika
AU - Kalita, Pradip Kumar
AU - Datta, Pranayee
PY - 2017
DA - 2017/10/12 00:00:00
PB - Springer Nature
SP - 546-557
IS - 1
VL - 29
SN - 0957-4522
SN - 1573-482X
ER -
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@article{2017_DAS,
author = {BANDANA DAS and Jutika Devi and Pradip Kumar Kalita and Pranayee Datta},
title = {Memristive, memcapacitive and meminductive behavior of single and co-doped cadmium selenide nanocomposites under different doping environment},
journal = {Journal of Materials Science: Materials in Electronics},
year = {2017},
volume = {29},
publisher = {Springer Nature},
month = {oct},
url = {https://doi.org/10.1007/s10854-017-7946-7},
number = {1},
pages = {546--557},
doi = {10.1007/s10854-017-7946-7}
}
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DAS, BANDANA, et al. “Memristive, memcapacitive and meminductive behavior of single and co-doped cadmium selenide nanocomposites under different doping environment.” Journal of Materials Science: Materials in Electronics, vol. 29, no. 1, Oct. 2017, pp. 546-557. https://doi.org/10.1007/s10854-017-7946-7.