Journal of Materials Science: Materials in Electronics, volume 32, issue 7, pages 9452-9462
High‐performance silicon‐based PbSe-CQDs infrared photodetector
Pengyu Chen
1
,
Zhiming Wu
2
,
Yuanlin Shi
1
,
Chunyu Li
1
,
JINQUAN WANG
1
,
Jun Yang
1
,
Xiang Dong
2
,
Jun Gou
2
,
Jun Wang
2
,
Yadong Jiang
2
Publication type: Journal Article
Publication date: 2021-03-10
Quartile SCImago
Q2
Quartile WOS
Q2
Impact factor: 2.8
ISSN: 09574522, 1573482X
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering
Abstract
Silicon technology is dominant in electronics and optoelectronics. The cut-off wavelength of silicon is less than 1.1 $$\upmu$$ m due to the bandgap, limiting applications of silicon in communication, sensing, and light harvesting. A new strategy for infrared photodetection is presented by integrating silicon and PbSe colloidal quantum dots (CQDs), which combines advantages of silicon devices and PbSe-CQDs. In this study, we introduce a silicon-based photodetector that is sensitive to infrared light with spectral response from 405 nm to 1550 nm. The device can deliver a high responsivity of 648.7AW− 1 and a fast response of 32.3 $$\upmu$$ s at 1550 nm. Besides, the detectivity and the external quantum efficiency of the device reached 7.48 × 1010 Jones and 6.47 × 104%, respectively. The performance of the device originates from the photovoltage generated at the interface between the silicon and the quantum dots. This photovoltage changed the width of the depletion layer to realize detection. These results indicate that the silicon-based quantum dot infrared photodetectors prepared by this method have application prospects in the field of optoelectronics.
Top-30
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Citations by publishers
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1 publication, 16.67%
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American Chemical Society (ACS)
1 publication, 16.67%
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Walter de Gruyter
1 publication, 16.67%
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Springer Nature
1 publication, 16.67%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 16.67%
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1 publication, 16.67%
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1
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Chen P. et al. High‐performance silicon‐based PbSe-CQDs infrared photodetector // Journal of Materials Science: Materials in Electronics. 2021. Vol. 32. No. 7. pp. 9452-9462.
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Chen P., Wu Z., Shi Y., Li C., WANG J., Yang J., Dong X., Gou J., Wang J., Jiang Y. High‐performance silicon‐based PbSe-CQDs infrared photodetector // Journal of Materials Science: Materials in Electronics. 2021. Vol. 32. No. 7. pp. 9452-9462.
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TY - JOUR
DO - 10.1007/s10854-021-05609-y
UR - https://doi.org/10.1007/s10854-021-05609-y
TI - High‐performance silicon‐based PbSe-CQDs infrared photodetector
T2 - Journal of Materials Science: Materials in Electronics
AU - Chen, Pengyu
AU - Wu, Zhiming
AU - Shi, Yuanlin
AU - Li, Chunyu
AU - WANG, JINQUAN
AU - Yang, Jun
AU - Dong, Xiang
AU - Gou, Jun
AU - Wang, Jun
AU - Jiang, Yadong
PY - 2021
DA - 2021/03/10 00:00:00
PB - Springer Nature
SP - 9452-9462
IS - 7
VL - 32
SN - 0957-4522
SN - 1573-482X
ER -
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@article{2021_Chen,
author = {Pengyu Chen and Zhiming Wu and Yuanlin Shi and Chunyu Li and JINQUAN WANG and Jun Yang and Xiang Dong and Jun Gou and Jun Wang and Yadong Jiang},
title = {High‐performance silicon‐based PbSe-CQDs infrared photodetector},
journal = {Journal of Materials Science: Materials in Electronics},
year = {2021},
volume = {32},
publisher = {Springer Nature},
month = {mar},
url = {https://doi.org/10.1007/s10854-021-05609-y},
number = {7},
pages = {9452--9462},
doi = {10.1007/s10854-021-05609-y}
}
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Chen, Pengyu, et al. “High‐performance silicon‐based PbSe-CQDs infrared photodetector.” Journal of Materials Science: Materials in Electronics, vol. 32, no. 7, Mar. 2021, pp. 9452-9462. https://doi.org/10.1007/s10854-021-05609-y.