Plasma Chemistry and Plasma Processing, volume 40, issue 3, pages 697-712
Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
Saurabh Karwal
1
,
Marcel A. Verheijen
1, 2
,
Karsten Arts
1
,
Tahsin Faraz
1
,
Wilhelmus M M Kessels
1
,
Mariadriana Creatore
1
1
Department of Applied Physics, University of Technology Eindhoven, Eindhoven, Netherlands
|
2
Eurofins Material Science, High Tech, Eindhoven, The Netherlands
|
Publication type: Journal Article
Publication date: 2020-04-13
Quartile SCImago
Q2
Quartile WOS
Q1
Impact factor: 3.6
ISSN: 02724324, 15728986
Surfaces, Coatings and Films
General Chemistry
General Chemical Engineering
Condensed Matter Physics
Abstract
In this work, we report on the atomic layer deposition (ALD) of HfNx thin films by employing CpHf(NMe2)3 as the Hf(IV) precursor and Ar–H2 plasma in combination with external RF substrate biasing as the co-reactant. Following up on our previous results based on an H2 plasma and external RF substrate biasing, here we address the effect of ions with a larger mass and higher energy impinging on HfNx film surface during growth. We show that an increase in the average ion energy up to 304 eV leads to a very low electrical resistivity of 4.1 × 10–4 Ωcm. This resistivity value is achieved for films as thin as ~ 35 nm, and it is an order of magnitude lower than the resistivity reported in literature for HfNx films grown by either CVD or ALD, while being comparable to the resistivity of PVD-grown HfNx films. From the extensive thin film characterization, we conclude that the impinging ions during the film growth lead to the very low electrical resistivity of HfNx films by suppressing the oxygen incorporation and in-grain nano-porosity in the films.
Top-30
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1 publication, 6.25%
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1 publication, 6.25%
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Citations by publishers
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3
4
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American Institute of Physics (AIP)
4 publications, 25%
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2 publications, 12.5%
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Elsevier
2 publications, 12.5%
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Wiley
2 publications, 12.5%
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American Chemical Society (ACS)
2 publications, 12.5%
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Tsinghua University Press
1 publication, 6.25%
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IOP Publishing
1 publication, 6.25%
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Multidisciplinary Digital Publishing Institute (MDPI)
1 publication, 6.25%
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Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii
1 publication, 6.25%
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- We do not take into account publications without a DOI.
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Karwal S. et al. Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure // Plasma Chemistry and Plasma Processing. 2020. Vol. 40. No. 3. pp. 697-712.
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Karwal S., Verheijen M. A., Arts K., Faraz T., Kessels W. M. M., Creatore M. Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure // Plasma Chemistry and Plasma Processing. 2020. Vol. 40. No. 3. pp. 697-712.
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TY - JOUR
DO - 10.1007/s11090-020-10079-x
UR - https://doi.org/10.1007/s11090-020-10079-x
TI - Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
T2 - Plasma Chemistry and Plasma Processing
AU - Karwal, Saurabh
AU - Verheijen, Marcel A.
AU - Arts, Karsten
AU - Faraz, Tahsin
AU - Kessels, Wilhelmus M M
AU - Creatore, Mariadriana
PY - 2020
DA - 2020/04/13 00:00:00
PB - Springer Nature
SP - 697-712
IS - 3
VL - 40
SN - 0272-4324
SN - 1572-8986
ER -
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@article{2020_Karwal,
author = {Saurabh Karwal and Marcel A. Verheijen and Karsten Arts and Tahsin Faraz and Wilhelmus M M Kessels and Mariadriana Creatore},
title = {Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure},
journal = {Plasma Chemistry and Plasma Processing},
year = {2020},
volume = {40},
publisher = {Springer Nature},
month = {apr},
url = {https://doi.org/10.1007/s11090-020-10079-x},
number = {3},
pages = {697--712},
doi = {10.1007/s11090-020-10079-x}
}
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Karwal, Saurabh, et al. “Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure.” Plasma Chemistry and Plasma Processing, vol. 40, no. 3, Apr. 2020, pp. 697-712. https://doi.org/10.1007/s11090-020-10079-x.