Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types
Publication type: Journal Article
Publication date: 2007-05-01
scimago Q3
SJR: 0.305
CiteScore: 2.8
Impact factor: —
ISSN: 10665285, 15739171
General Chemistry
Abstract
A correlation between the recombination rate constant of free electrons and holes (k r) and the band gap (E g) of semiconductors (AgCl, AgBr, CdxZn1−x S, CdSe, CdTe, and their solid solutions) at 295 K was found. The experimental data were obtained by the UHF photoconductivity (36 GHz) using current carrier generation by laser pulses (λ = 337 nm, pulse duration 8 ns). A decrease in E g in a range of 1.5–3 eV increases k r by 1.5 orders of magnitude according to the law close to exponential.
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Novikov G. F., Radychev N. A. Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types // Russian Chemical Bulletin. 2007. Vol. 56. No. 5. pp. 890-894.
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Novikov G. F., Radychev N. A. Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types // Russian Chemical Bulletin. 2007. Vol. 56. No. 5. pp. 890-894.
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RIS
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TY - JOUR
DO - 10.1007/s11172-007-0134-9
UR - https://doi.org/10.1007/s11172-007-0134-9
TI - Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types
T2 - Russian Chemical Bulletin
AU - Novikov, G F
AU - Radychev, N A
PY - 2007
DA - 2007/05/01
PB - Springer Nature
SP - 890-894
IS - 5
VL - 56
SN - 1066-5285
SN - 1573-9171
ER -
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BibTex (up to 50 authors)
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@article{2007_Novikov,
author = {G F Novikov and N A Radychev},
title = {Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types},
journal = {Russian Chemical Bulletin},
year = {2007},
volume = {56},
publisher = {Springer Nature},
month = {may},
url = {https://doi.org/10.1007/s11172-007-0134-9},
number = {5},
pages = {890--894},
doi = {10.1007/s11172-007-0134-9}
}
Cite this
MLA
Copy
Novikov, G. F., and N A Radychev. “Experimental determination of the dependence of the free electron—hole recombination rate constant on the band gap in semiconductors of the AIIBVI and AIBVII types.” Russian Chemical Bulletin, vol. 56, no. 5, May. 2007, pp. 890-894. https://doi.org/10.1007/s11172-007-0134-9.