Recent advances in joining of SiC-based materials (monolithic SiC and SiCf/SiC composites): Joining processes, joint strength, and interfacial behavior

Silicon carbide (SiC) has been widely concerned for its excellent overall mechanical and physical properties, such as low density, good thermal-shock behavior, high temperature oxidation resistance, and radiation resistance; as a result, the SiC-based materials have been or are being widely used in most advanced fields involving aerospace, aviation, military, and nuclear power. Joining of SiC-based materials (monolithic SiC and SiCf/SiC composites) can resolve the problems on poor processing performance and difficulty of fabrication of large-sized and complex-shaped components to a certain extent, which are originated from their high inherent brittleness and low impact toughness. Starting from the introduction to SiC-based materials, joining of ceramics, and joint strength characterization, the joining of SiC-based materials is reviewed by classifying the as-received interlayer materials, involving no interlayer, metallic, glass-ceramic, and organic interlayers. In particular, joining processes (involving joining techniques and parameter conditions), joint strength, interfacial microstructures, and/or reaction products are highlighted for understanding interfacial behavior and for supporting development of application-oriented joining techniques.