Reactive-sputter-deposited TiN films on glass substrates

Sputter-deposited TiN thin films on glass substrate were investigated by X-ray diffraction analysis. The lattice parameter determined on the basis of (200) and (220) peaks is smaller than that determined on the basis of (111) peaks. A decrease in lattice parameter with increasing temperature was observed on annealing. The films exhibited preferred orientation. The tendency towards a specific preferred orientation is discussed on the basis of strain and surface energies. At low substrate temperatures and/or at small film thicknesses surface energy controls growth and a (100) preferred orientation is expected. At large film thicknesses and at high substrate temperatures the strain energy predominates and the (111) orientation is expected.