Physica E: Low-Dimensional Systems and Nanostructures, volume 7, issue 3-4, pages 326-330
Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors
A. F. TSATSUL'NIKOV
1
,
B.V. Volovik
1
,
D.A. Bedarev
1
,
A. Zhukov
1
,
A. R. KOVSH
1
,
N. A. Maleev
1
,
V. M. Ustinov
1
,
P. S. KOP'EV
1
,
Zh. I. Alferov
1
,
R Heitz
2
,
N. N. LEDENTSOV
2
,
D. Bimberg
2
Publication type: Journal Article
Publication date: 2000-05-01
scimago Q2
wos Q2
SJR: 0.529
CiteScore: 7.3
Impact factor: 2.9
ISSN: 13869477, 18731759
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Abstract
We have studied quantum dots (QDs) fabricated by activated spinodal decomposition (ASD) of an InGa(Al)As alloy deposited on top of self-organized InAs nanoscale stressors on GaAs substrate. Such a growth sequence results in a strong red shift of the PL emission down to 1.3 μm at 300 K. This red shift is caused by the formation of In-rich areas in the vicinity of the InAs islands, which increase the effective dot size. Beyond a certain critical InAs composition or nominal thickness of the InGa(Al)As layer the PL line shifts back towards higher energies. Adding Al to the alloy increases the red shift for a given In concentration. Room temperature lasing near 1.3 μm with threshold current densities of about 85 A / cm 2 was achieved for lasers based on three-fold stacked ASD-formed QDs, with a maximum cw output power of 2.7 W.
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