Ceramics International, volume 48, issue 13, pages 19467-19483
Superhard Ta–O–N coatings produced on titanium using induction physical vapor deposition
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Yuri Gagarin State Technical University of Saratov, Department of Materials Science and Biomedical Engineering, 77 Politechnicheskaya Str, 410054, Saratov, Russia
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Publication type: Journal Article
Publication date: 2022-07-01
Journal:
Ceramics International
scimago Q1
wos Q1
SJR: 0.938
CiteScore: 9.4
Impact factor: 5.1
ISSN: 02728842, 18733956
Materials Chemistry
Surfaces, Coatings and Films
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Process Chemistry and Technology
Abstract
Due to simulation by the finite element method, the temperature fields in the “inductor – tantalum target – titanium product” system were calculated depending on the inductor current and exposure time during induction physical vapor deposition (IPVD). The conditions under which the tantalum target was heated to the evaporation temperature in vacuum were determined. It was experimentally established that after IPVD at an operating current I O = 500–800 A (inductor current I IND from 4.9 to 6.7 kA), electrical power consumption P C = 1.67–3.32 kW, and exposure time t = 30–300 s, there was an in increase in the content of tantalum C [Ta] = 21.6–42.1 at.%, oxygen C [O] = 16.5–43.5 at.%, and nitrogen C [N] = 2.6–9.4 at.% on the surfaces of titanium samples. According to the XRD data, the resulting thin-layered structure on the titanium samples was mainly presented by the following crystalline phases: tantalum oxides (Ta 2 O 5 , Ta 2 O), tantalum oxynitride/nitride (TaON, TaN), titanium oxides (TiO 2 , TiO), and metal phases (α-Ta, α-Ti). It was found that during IPVD hard H = 18.85–39.17 GPa and superhard H = 46.18–89.88 GPa tantalum-containing coatings were obtained on the surfaces of titanium samples. The highest resistance to plastic deformation (by 50–70%) and wear resistance of titanium samples with tantalum-containing coatings was observed in the case of short exposure t < 60 s during IPVD.
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