Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film
Ekaterine Chikoidze
1
,
Jacob Leach
2
,
Zeyu Chi
1
,
Jurgen Von Bardeleben
3
,
Belén Ballesteros
4
,
Anne-Marie Gonçalves
5
,
Tamar Tchelidze
6
,
Y. Dumont
1
,
A. Perez-Tomas
4
1
2
Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC 27617-4606, USA
|
3
4
5
Publication type: Journal Article
Publication date: 2024-01-01
scimago Q1
wos Q1
SJR: 1.192
CiteScore: 11.8
Impact factor: 6.3
ISSN: 09258388, 18734669
Materials Chemistry
Metals and Alloys
Mechanical Engineering
Mechanics of Materials
Abstract
Although two-dimensional electron gases have been realized in a number of semiconductor surfaces, examples of two-dimensional hole gases (2DHG) - the counterpart to 2DEG - are still very limited. Besides, owing to the deep energy level nature of potential dopants, achieving acceptor p-type β-Ga2O3 is a well-known challenge so far. In this work, we report what appears to be an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) β-Ga2O3 crystal which otherwise is n-type in the bulk. The majority of the free carries at the surface have been determined to be holes with a sheet concentration of p ∼ 8.7 × 1013 cm−2 and a puzzlingly high mobility value of µh ∼ 80 cm2/(V·s) at room T.
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8
Total citations:
8
Citations from 2024:
8
(100%)
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GOST
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Chikoidze E. et al. Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film // Journal of Alloys and Compounds. 2024. Vol. 971. p. 172713.
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Chikoidze E., Leach J., Chi Z., Von Bardeleben J., Ballesteros B., Gonçalves A., Tchelidze T., Dumont Y., Perez-Tomas A. Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film // Journal of Alloys and Compounds. 2024. Vol. 971. p. 172713.
Cite this
RIS
Copy
TY - JOUR
DO - 10.1016/j.jallcom.2023.172713
UR - https://doi.org/10.1016/j.jallcom.2023.172713
TI - Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film
T2 - Journal of Alloys and Compounds
AU - Chikoidze, Ekaterine
AU - Leach, Jacob
AU - Chi, Zeyu
AU - Von Bardeleben, Jurgen
AU - Ballesteros, Belén
AU - Gonçalves, Anne-Marie
AU - Tchelidze, Tamar
AU - Dumont, Y.
AU - Perez-Tomas, A.
PY - 2024
DA - 2024/01/01
PB - Elsevier
SP - 172713
VL - 971
SN - 0925-8388
SN - 1873-4669
ER -
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BibTex (up to 50 authors)
Copy
@article{2024_Chikoidze,
author = {Ekaterine Chikoidze and Jacob Leach and Zeyu Chi and Jurgen Von Bardeleben and Belén Ballesteros and Anne-Marie Gonçalves and Tamar Tchelidze and Y. Dumont and A. Perez-Tomas},
title = {Surface Two-Dimensional Hole Gas in Si doped β-Ga2O3 Thin Film},
journal = {Journal of Alloys and Compounds},
year = {2024},
volume = {971},
publisher = {Elsevier},
month = {jan},
url = {https://doi.org/10.1016/j.jallcom.2023.172713},
pages = {172713},
doi = {10.1016/j.jallcom.2023.172713}
}