Journal of Crystal Growth, volume 593, pages 126770

Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures

Publication type: Journal Article
Publication date: 2022-09-01
scimago Q2
wos Q3
SJR: 0.379
CiteScore: 3.6
Impact factor: 1.7
ISSN: 00220248, 18735002
Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics
Abstract
The 2D to 3D growth transition of stacked submonolayer (SML) InAs/GaAs nanostructures as a function of the number of SML InAs stacks is investigated by atomic force microscopy (AFM) measurements. It is found that critical amount of InAs per cycle decreases as the number of stacks increases. These results are analyzed in context of the balance between the average In content and the total deposited thickness in the SML stack.
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